Related papers: Distribution of write error rate of spin-transfer-…
Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough…
Impact of spin transfer torque (STT) on the write error rate of a voltage-torque-based magnetoresistive random access memory is theoretically analyzed by using the macrospin model. During the voltage pulse the STT assists or suppresses the…
Spin transfer torque magnetic random access memory (STT-MRAM) is considered as one of the most promising candidates to build up a true universal memory thanks to its fast write/read speed, infinite endurance and non-volatility. However the…
Spin Transfer Torque Random Access Memory (STT-RAM) has garnered interest due to its various characteristics such as non-volatility, low leakage power, high density. Its magnetic properties have a vital role in STT switching operations…
Voltage controlled magnetoresistive random access memory (VC MRAM) is a promising candidate for a future low-power high-density memory. The main causes of bit errors in VC MRAM are write error and retention error. As the size of the memory…
Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…
Spatial and temporal variability of HfOx-based resistive random access memory (RRAM) are investigated for manufacturing and product designs. Manufacturing variability is characterized at different levels including lots, wafers, and chips.…
Embedded non-volatile memory technologies such as resistive random access memory (RRAM) and spin-transfer torque magnetic RAM (STT MRAM) are increasingly being researched for application in neuromorphic computing and hardware accelerators…
We theoretically investigate influences of electronic circuit delay, noise and temperature on write-error-rate (WER) in voltage-controlled magnetization switching operation of a magnetic-topological-insulator-based (MTI) device by means of…
Stochastic behaviors of resistive random access memory (RRAM) play an important role in the design of cross-point memory arrays. A Monte Carlo compact model of oxide RRAM is developed and calibrated with experiments on various device stack…
We model "soft" error rates for writing (WSER) and for reading (RSER) for perpendicular spin-torque memory devices by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes…
As an emerging non-volatile memory (NVM) technology, spin-torque transfer magnetic random access memory (STT-MRAM) has received great attention in recent years since it combines the features of low switching energy, fast write/read speed,…
We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability…
The concept of perpendicular shape anisotropy spin-transfer torque magnetic random-access memory (PSA-STT-MRAM) consists in increasing the storage layer thickness to values comparable to the cell diameter, to induce a perpendicular shape…
We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT),…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
The Word Error Rate (WER) is the common measure of accuracy for Automatic Speech Recognition (ASR). Transcripts are usually pre-processed by substituting specific characters to account for non-semantic differences. As a result of this…
Spin Transfer Torque MRAMs are attractive due to their non-volatility, high density and zero leakage. However, STT-MRAMs suffer from poor reliability due to shared read and write paths. Additionally, conflicting requirements for data…
This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation…
A new class of spin-transfer torque magnetic random access memory (STT-MRAM) is discussed, in which writing is achieved using thermally initiated magnonic current pulses as an alternative to conventional electric current pulses. The…