Switching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation
Abstract
We model "soft" error rates for writing (WSER) and for reading (RSER) for perpendicular spin-torque memory devices by solving the Fokker-Planck equation for the probability distribution of the angle that the free layer magnetization makes with the normal to the plane of the film. We obtain: (1) an exact, closed form, analytical expression for the zero-temperature switching time as a function of initial angle; (2) an approximate analytical expression for the exponential decay of the WSER as a function of the time the current is applied; (3) comparison of the approximate analytical expression for the WSER to numerical solutions of the Fokker-Planck equation; (4) an approximate analytical expression for the linear increase in RSER with current applied for reading; (5) comparison of the approximate analytical formula for the RSER to the numerical solution of the Fokker-Planck equation; and (6) confirmation of the accuracy of the Fokker-Planck solutions by comparison with results of direct simulation using the single-macrospin Landau-Lifshitz-Gilbert (LLG) equations with a random fluctuating field in the short-time regime for which the latter is practical.
Cite
@article{arxiv.1202.2621,
title = {Switching Distributions for Perpendicular Spin-Torque Devices within the Macrospin Approximation},
author = {W. H. Butler and T. Mewes and C. K. A. Mewes and P. B. Visscher and W. H. Rippard and S. E. Russek and Ranko Heindl},
journal= {arXiv preprint arXiv:1202.2621},
year = {2015}
}