Related papers: THz detection and amplification using plasmonic Fi…
1T-TaS$_2$ exhibits several resistivity phases due to the modulation of charge density wave (CDW). The fact that such phase transition can be driven electrically has attracted a lot of attention in the recent past towards…
Plasmonic photoconductive antennas have great promise for increasing responsivity and detection sensitivity of conventional photoconductive detectors in time-domain terahertz imaging and spectroscopy systems. However, operation bandwidth of…
Superconducting field-effect transitor (SuFET) and Josephson field-effect transistor (JoFET) technologies take advantage of electric field induced control of charge carrier concentration in order to modulate the channel superconducting…
Imaging applications in the terahertz (THz) frequency range are severely restricted by diffraction. Near-field scanning probe microscopy is commonly employed to enable mapping of the THz electromagnetic fields with sub-wavelength spatial…
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for an arbitrary drain-to-source voltage provided that the…
Terahertz (THz) technology is critical for quantum material physics, biomedical imaging, ultrafast electronics, and next-generation wireless communications. However, standing in the way of widespread applications is the scarcity of…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
The manipulation of TO-phonon polaritons and the terahertz (THz) light field associated with them by means of an ultra-sound acoustic wave is proposed and illustrated by calculating the TO-phonon-mediated THz response of acoustically-pumped…
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the…
We developed a high-speed and low-noise time-domain current measurement scheme using a homemade GaAs high-electron-mobility-transistor-based cryogenic transimpedance amplifier (TIA). The scheme is versatile for broad cryogenic current…
Coherent terahertz (THz) emission is emerging as a powerful new tool to probe symmetry breakings in quantum materials. This method relies on second order optical nonlinearities and is complementary to second harmonic generation…
Collective vibrations of proteins, rotations of small molecules, excitations of high-temperature superconductors, and electronic transitions in semiconductor nanostructures occur with characteristic frequencies between 1 and 10 THz.…
Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…
The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced…
Terahertz (THz)-based electron manipulation has recently been shown to hold tremendous promise as a technology for manipulating and driving the next-generation of compact ultrafast electron sources. Here, we demonstrate an ultrafast…
The effect of the photoinduced absorption of terahertz (THz) radiation in a semi-insulating GaAs crystal is studied by the pulsed THz transmission spectroscopy. We found that a broad-band modulation of THz radiation may be induced by a…
We report on terahertz (THz) radiation under electrical pumping from a degenerate semiconductor possessing an electron accumulation layer. In InN, the random grating formed by topographical defects provides high-efficiency coupling of…
We construct a terahertz time-domain spectrometer (THz-TDS) system based on photoconductive antenna (PCA). A 800 nm Ti sapphire femtosecond laser with 80 MHz repetition rate provides the pump and probe laser pulse, which has a 45 fs pulse…
The Zener-Klein (ZK) interband tunneling in graphene layers (GLs) with the lateral n-i-n and p-i-n junctions results in the nonlinear I-V characteristics that can be used for the rectification and detection of the terahertz (THz) signals.…
We have performed terahertz (THz)-time domain spectroscopy in various geometries, for characterizing the directivity of THz waves emitted from groove-patterned InAs structures. First, we have distinguished the THz emission mechanisms as a…