Related papers: Improvement of FTJ on-current by work function eng…
We study spin-transfer-torque driven magnetization dynamics of a perpendicular magnetic tunnel junction (MTJ) nanopillar. Based on the combination of spin-torque ferromagnetic resonance and microwave spectroscopy techniques, we demonstrate…
Magnetic tunnel junctions (MTJ) have been successfully applied in various sensing application and digital information storage technologies. Currently, a number of new potential applications of MTJs are being actively studied, including…
Using a simple quantum-mechanical model, we explore a tunneling anisotropic magnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FTJs) with a ferromagnetic electrode and a ferroelectric barrier layer, which spontaneous…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
In this paper we propose a modified structure of TFET incorporating ferroelectric oxide as the complementary gate dielectric operating in negative capacitance zone, called the Negative Capacitance Tunnel FET (NCTFET). The proposed device…
In this paper we extend our earlier analysis of the novel Josephson effect in triplet superconductor--ferromagnet--triplet superconductor (TFT) junctions [B. Kastening \emph{et al.}, Phys. Rev. Lett. {\bf{96}}, 047009 (2006)]. In our more…
Arrays of Vortex Transitional (VT) memory cells with functional density up to $1 Mbit/cm^2$ have been designed, fabricated, and successfully demonstrated. This progress is due to recent advances in design optimization and in superconductor…
Physical devices exhibiting stochastic functions with low energy consumption and high device density have the potential to enable complex probability-based computing algorithms, accelerate machine learning tasks, and enhance hardware…
Spintronic nano-neurons offer a promising route towards energy-efficient, high-performance hardware neural networks thanks to their inherent low-input nonlinear dynamics. However, training such networks remains a major bottleneck as it…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Magnetic materials that possess large bulk perpendicular magnetic anisotropy (PMA) are essential for the development of magnetic tunnel junctions (MTJs) used in future spintronic memory and logic devices. The addition of an…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
Josephson junctions with ferromagnetic layers are vital elements in a new class of cryogenic memory devices. One style of memory device contains a spin valve with one "hard" magnetic layer and one "soft" layer. To achieve low switching…
The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…
Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…
The Jagiellonian-PET (J-PET) collaboration is developing a prototype TOF-PET detector based on long polymer scintillators. This novel approach exploits the excellent time properties of the plastic scintillators, which permit very precise…
Magnetic tunnel junction (MTJ) is the key component to enable information access and increasing number of MTJs is integrated to develop high-density spintronic devices. However, continuous miniaturization of the conventional MTJs is…
Surface oxidation of the bottom ferromagnetic (FM) electrode, one of the major detrimental factors to the performance of a Magnetic Tunnel Junction (MTJ), is difficult to avoid during the fabrication process of the MTJ's tunnel barrier.…
Multilayer edge molecular spintronics device (MEMSD) approach can produce novel logic and memory units for the computers. MEMSD are produced by bridging the molecular channels across the insulator, in the exposed edge region(s) of a…