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The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment,…

Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…

Mesoscale and Nanoscale Physics · Physics 2015-10-14 Xiang-Xiang Song , Hai-Ou Li , Jie You , Tian-Yi Han , Gang Cao , Tao Tu , Ming Xiao , Guang-Can Guo , Hong-Wen Jiang , Guo-Ping Guo

Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been…

Mesoscale and Nanoscale Physics · Physics 2021-05-05 Guo Xuan Chan , Jason P. Kestner , Xin Wang

Semiconductor quantum dots with confined electron or hole spins show promise for quantum information processing as they allow for efficient electric field-driven qubit manipulation. However, their susceptibility to electric noise poses a…

Mesoscale and Nanoscale Physics · Physics 2024-08-08 Yaser Hajati , Guido Burkard

Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error…

Mesoscale and Nanoscale Physics · Physics 2016-03-23 Clement H. Wong

We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and non-invasive state readout is achieved…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 K. D. Petersson , J. R. Petta , H. Lu , A. C. Gossard

We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting…

Fast measurements of quantum devices is important in areas such as quantum sensing, quantum computing and nanodevice quality analysis. Here, we develop a superconductor-semiconductor multi-module microwave assembly to demonstrate charge…

Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots.…

As quantum networks expand and are deployed outside research laboratories, a need arises to design and integrate compact control electronics for each memory node. It is essential to understand the performance requirements for such systems,…

We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Xuedong Hu , Belita Koiller , S. Das Sarma

The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have…

Low-frequency noise presents a serious source of decoherence in solid-state qubits. When combined with a continuous weak measurement of the eigenstates, the low-frequency noise induces a second-order relaxation between the qubit states.…

Quantum Physics · Physics 2011-07-26 L. Tian

We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are…

Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on Si pMOSFETs offers great potentialities in terms of integration…

Quantum Physics · Physics 2022-04-06 L. Bellentani , M. Bina , S. Bonen , A. Secchi , A. Bertoni , S. Voinigescu , A. Padovani , L. Larcher , F. Troiani

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the…

Direct phonon spin-lattice relaxation of an electron qubit bound by a donor impurity or quantum dot in SiGe heterostructures is investigated. The aim is to evaluate the importance of decoherence from this mechanism in several important…

Materials Science · Physics 2009-11-07 Charles Tahan , Mark Friesen , Robert Joynt

Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally…

Integrating solid-state spin defects into classical electronic devices can enable new opportunities for quantum information processing that benefit from existing semiconductor technology. We show, through bias control of an isotopically…

A solid-state quantum computer with dipolar coupling between qubits is proposed. The qubits are formed by the low-lying states of an isolated acceptor in silicon. The system has the scalability inherent to spin-based solid state systems,…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 B. Golding , M. I. Dykman
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