Electronic Noise Considerations for Designing Integrated Solid-State Quantum Memories
Abstract
As quantum networks expand and are deployed outside research laboratories, a need arises to design and integrate compact control electronics for each memory node. It is essential to understand the performance requirements for such systems, especially concerning tolerable levels of noise, since these specifications dramatically affect a system's design complexity and cost. Here, using an approach that can be easily generalized across quantum-hardware platforms, we present a case study based on nitrogen-vacancy (NV) centers in diamond. We model and experimentally verify the effects of phase noise and timing jitter in the control system in conjunction with the spin qubit's environmental noise. We further consider the impact of different phase noise characteristics on the fidelity of dynamical decoupling sequences. The results demonstrate a procedure to specify design requirements for integrated quantum control signal generators for solid-state spin qubits, depending on their coherence time, intrinsic noise spectrum, and required fidelity.
Cite
@article{arxiv.2501.00683,
title = {Electronic Noise Considerations for Designing Integrated Solid-State Quantum Memories},
author = {Tzu-Yung Huang and David A. Hopper and Kaisarbek Omirzakhov and Mohamad Hossein Idjadi and S. Alexander Breitweiser and Firooz Aflatouni and Lee C. Bassett},
journal= {arXiv preprint arXiv:2501.00683},
year = {2025}
}