Related papers: Stochastic magnetic actuated random transducer dev…
Probabilistic computers replace logic gates with networks of interacting random variables, creating bidirectional systems that can back-derive inputs from outputs. Such architectures enable efficient generation of random samples,…
Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a…
It has recently been shown that a suitably interconnected network of tunable telegraphic noise generators or "p-bits" can be used to perform even precise arithmetic functions like a 32-bit adder. In this paper we use simulations based on…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
Non-linear dynamics, including auto-oscillations, chaotic dynamics, and synchronization, are integral to physical and biological applications and can be excited in spintronic devices. In this study, we are interested in exploring the…
Recent advances in predictive data analytics and ever growing digitalization and connectivity with explosive expansions in industrial and consumer Internet-of-Things (IoT) has raised significant concerns about security of people's…
High impedance (about 1 Megaohm) magnetic tunnel junctions (MTJs) are used to observe and record the magnetodynamics of the nanomagnets that form the junctions themselves. To counteract the bandwidth limitations caused by the high impedance…
Interest in Restricted Boltzmann Machine (RBM) is growing as a generative stochastic artificial neural network to implement a novel energy-efficient machine-learning (ML) technique. For a hardware implementation of the RBM, an essential…
The true random number generators (TRNGs) have received extensive attention because of their wide applications in information transmission and encryption. The true random numbers generated by TRNG are typically applied to the encryption…
Binary stochastic neurons (BSNs) are excellent activators for machine learning. An ideal platform for implementing them are low- or zero-energy-barrier nanomagnets (LBMs) possessing in-plane anisotropy (e.g. circular or slightly elliptical…
Spin transfer torque magnetic random access memory (STT-MRAM) is a promising candidate for next generation memory as it is non-volatile, fast, and has unlimited endurance. Another important aspect of STT-MRAM is that its core component, the…
We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have…
Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized…
Magnetic tunnel junctions are nanoscale devices which have recently attracted interested in the context of frequency multiplexed spintronic neural networks, due to their interesting dynamical properties, which are defined during the…
We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic…
We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
In this paper we study the device physics of a technique for realizing an n-p-n bipolar transistor action in the source side of a junctionless nanowire tunneling FET (BJN-TFET). In the on-state, tunneling of electrons from valence band of…