English

A Toffoli Gadget for Magnetic Tunnel Junctions Boltzmann Machines

Mesoscale and Nanoscale Physics 2025-04-29 v1 Applied Physics

Abstract

Magnetic Tunnel Junctions (MTJs) are of great interest for non-conventional computing applications. The Toffoli gate is a universal reversible logic gate, enabling the construction of arbitrary boolean circuits. Here, we present a proof-of-concept construction of a gadget which encodes the Toffoli gate's truth table into the ground state of coupled uniaxial nanomagnets that could form the free layers of perpendicularly magnetized MTJs. This construction has three input bits, three output bits, and one ancilla bit. We numerically simulate the seven macrospins evolving under the stochastic Landau-Lifshitz-Gilbert (s-LLG) equation. We investigate the effect of the anisotropy-to-exchange-coupling strength ratio HA/HexH_A/H_\text{ex} on the working of the gadget. We find that for HA/Hex0.93H_A/H_\text{ex} \lesssim 0.93, the spins evolve to the Toffoli gate truth table configurations under LLG dynamics alone, while higher HA/HexH_A/H_\text{ex} ratios require thermal annealing due to suboptimal metastable states. Under our chosen annealing procedure, the s-LLG simulation with thermal annealing achieves a 100% success rate up to HA/Hex3.0H_A/H_\text{ex}\simeq3.0. The feasibility of constructing MTJ-free-layer-based Toffoli gates highlights their potential in designing new types of MTJ-based circuits.

Keywords

Cite

@article{arxiv.2411.00203,
  title  = {A Toffoli Gadget for Magnetic Tunnel Junctions Boltzmann Machines},
  author = {Dairong Chen and Augustin Couton Wyporek and Pierre Chailloleau and Ahmed Sidi El Valli and Flaviano Morone and Stephane Mangin and Jonathan Z. Sun and Dries Sels and Andrew D. Kent},
  journal= {arXiv preprint arXiv:2411.00203},
  year   = {2025}
}