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This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic…
Superparamagnetic tunnel junctions (SMTJs) are promising sources for the randomness required by some compact and energy-efficient computing schemes. Coupling SMTJs gives rise to collective behavior that could be useful for cognitive…
The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating…
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage density. Multi-bit storage element is designed using pMTJs…
Spin-transfer torque magnetic random-access memory (STT-MRAM) relies on nanoscale magnetic tunnel junctions (MTJs) as its fundamental building blocks. Next-generation STT-MRAM requires strategies that simultaneously improve switching energy…
The emerging magneto-resistive RAM (MRAM) has considerable potential to become a universal memory technology because of its several advantages: unlimited endurance, lower read/write latency, ultralow-power operation, high-density, and CMOS…
Deep Spiking Neural Networks are becoming increasingly powerful tools for cognitive computing platforms. However, most of the existing literature on such computing models are developed with limited insights on the underlying hardware…
The slowing down of Moore's Law has led to a crisis as the computing workloads of Artificial Intelligence (AI) algorithms continue skyrocketing. There is an urgent need for scalable and energy-efficient hardware catering to the unique…
Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…
This paper introduces an analog-to-stochastic converter using a magnetic tunnel junction (MTJ) device for vision chips based on stochastic computation. Stochastic computation has been recently exploited for area-efficient hardware…
The straintronic magnetic tunnel junction (s-MTJ) is an MTJ whose resistance state can be changed continuously or gradually from high to low with a gate voltage that generates strain the magnetostrictive soft layer. This unusual feature,…
Pulsed spin-torque switching has been studied using single-shot time-resolved electrical measurements in perpendicularly magnetized magnetic tunnel junctions as a function of pulse amplitude and junction size in 50 to 100 nm diameter…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
Unbiased sources of true randomness are critical for the successful deployment of stochastic unconventional computing schemes and encryption applications in hardware. Leveraging nanoscale thermal magnetization fluctuations provides an…
Conventional logic and memory devices are built out of deterministic units such as transistors, or magnets with energy barriers in excess of 40-60 kT. We show that stochastic units, p-bits, can be interconnected to create robust…
Stochastic spiking neural networks based on nanoelectronic spin devices can be a possible pathway to achieving "brainlike" compact and energy-effcient cognitive intelligence. The computational model attempt to exploit the intrinsic device…
GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal.…
Thermally-induced transitions between bistable magnetic states of magnetic tunnel junctions (MTJ) are of interest for generating random bitstreams and for applications in stochastic computing. An applied field transverse to the easy axis of…
The probability switching characteristics in spin transfer torque magnetic tunnel junctions (STT-MTJs) are simulated by considering thermal noise using a spin-circuit module. Thermal noise significantly affects the probability switching for…
We characterize the nanosecond pulse switching performance of the three-terminal magnetic tunnel junctions (MTJs), driven by the spin Hall effect (SHE) in the channel, at a cryogenic temperature of 3 K. The SHE-MTJ devices exhibit…