Related papers: Room temperature spin-orbit torque efficiency and …
Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we…
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
We have studied the spin orbit torque (SOT) in Pt/Co/Ir multilayers with 3 repeats of the unit structure. As the system exhibits oscillatory interlayer exchange coupling (IEC) with varying Ir layer thickness, we compare the SOT of films…
We investigated the nature of transport and magnetic properties in SrIr0.5Ru0.5O3, (SIRO) which has characteristics intermediate between a correlated non-Fermi liquid state and an itinerant Fermi liquid state, by growing perovskite thin…
Emerging wide varieties of the two-dimensional (2D) van der Waals (vdW) magnets with atomically thin and smooth interfaces holds great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW 2D…
Current-induced spin-orbit torques (SOTs) represent one of the most effective ways to manipulate the magnetization in spintronic devices. The orthogonal torque-magnetization geometry, the strong damping, and the large domain wall velocities…
We employ density functional theory plus dynamical mean field theory and identify the physical origin of why two layers of SrVO$_3$ on a SrTiO$_3$ substrate are insulating: the thin film geometry lifts the orbital degeneracy which in turn…
Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been…
High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization…
The growing demand for artificial intelligence and complex computing has underscored the urgent need for advanced data storage technologies. Spin-orbit torque (SOT) has emerged as a leading candidate for high-speed, high-density magnetic…
Efficient generation of spin-orbit torques (SOTs) is central for the exciting field of spin-orbitronics. Platinum, the archetypal spin Hall material, has the potential to be an outstanding provider for spin-orbit torques due to its giant…
Magnetic heterostructure Mo/CoFeB/MgO has strong perpendicular magnetic anisotropy and thermal stability. Through current-induced hysteresis loop shift measurements, we show that the dampinglike spin-orbit torque (SOT) efficiency of…
The spin Hall effect (SHE) is found to be strong in heavy transition metals (HM), such as Ta and W, in their amorphous and/or high resistivity form. In this work, we show that by employing a Cu-Ta binary alloy as buffer layer in an…
Electric-field manipulation of magnetic order has proved of both fundamental and technological importance in spintronic devices. So far, electric-field control of ferromagnetism, magnetization and magnetic anisotropy has been explored in…
This paper presents physical modeling and benchmarking for two-terminal spin-orbit torque magnetic random-access memory (2T-SOT-MRAM). The results indicate that the common SOT materials that provide only in-plane torque can provide little…
Spin-orbit torques (SOTs) have opened a new path to switch the magnetization in perpendicularly magnetized films and are of great interest due to their potential applications in novel data storage technology, such as the magnetic random…
The effect of spin currents on the magnetic order of insulating antiferromagnets (AFMs) is of fundamental interest and can enable new applications. Toward this goal, characterizing the spin-orbit torques (SOT) associated with AFM/heavy…
Many key electronic technologies (e.g., large-scale computing, machine learning, and superconducting electronics) require new memories that are fast, reliable, energy-efficient, and of low-impedance at the same time, which has remained a…
The 5d transition-metal oxides have a unique electronic structure dominated by strong spin-orbit coupling and hence they can be an intriguing platform to explore spin-current physics. Here, we report on room-temperature generation of…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…