Related papers: Room temperature spin-orbit torque efficiency and …
The spin-orbit torque (SOT) arising from materials with large spin-orbit coupling promises a path for ultra-low power and fast magnetic-based storage and computational devices. We investigated the SOT from magnetron-sputtered BixSe(1-x)…
In the increasing interests on spin-orbit torque (SOT) with various magnetic materials, we investigated SOT in rare earth-transition metal ferrimagnetic alloys. The harmonic Hall measurements were performed in Pt/GdFeCo bilayers to quantify…
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice,…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
Oxidation strongly influences the properties of magnetic layers employed in spintronic devices. We study the effect of oxidation on the structural, magnetic, and electrical properties as well as current-induced spin-orbit torques (SOTs) in…
SrRuO$_3$ is a metallic ferromagnet. Its electrical resistivity is reported for temperatures up to 1000K; its Hall coefficient for temperatures up to 300K; its specific heat for temperatures up to 230K. The energy bands have been calculated…
Spin orbit coupling provides a mechanism to lock the momentum of electron to its spin degree, recent years was revealed to be essential in arousing many novel physical behaviors. SrIrO3 is a typical metallic member of the strong spin orbit…
Thin films of the ferromagnetic metal SrRuO3 (SRO) show a varying easy magnetization axis depending on the epitaxial strain and undergo a metal-to-insulator transition with decreasing film thickness. We have investigated the magnetic…
Magnetic devices are a leading contender for implementing memory and logic technologies that are nonvolatile, that can scale to high density and high speed, and that do not suffer wear-out. However, widespread applications of magnetic…
The effect of Cr substitution in a SrRuO3 epitaxial thin film on SrTiO3 substrate was investigated by measuring the magnetic and transport properties and the electronic states. The ferromagnetic transition temperature of the SrRu0.9Cr0.1O3…
The control of magnetization by electric current is a rapidly developing area motivated by a strong synergy between breakthrough basic research discoveries and industrial applications in the fields of magnetic recording, magnetic field…
Electrical manipulation of magnetization by spin-orbit torque (SOT) has shown promise for realizing reliable magnetic memories and oscillators. To date, the generation of transverse spin current and SOT, whether it is of spin Hall effect…
Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas,…
The low power manipulation of magnetization is currently a highly sought-after objective in spintronics. Non ferromagnetic large spin-orbit coupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interesting elements of response…
The structural crystal features, electron transport and magnetotransport of the epitaxial strontium iridate (SrIrO$_3$) and iridate/manganite SrIrO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructure have been investigated. The influence of…
We have investigated the electronic and magnetic properties of perovskite SrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat (001) SrTiO3 substrates. SrRuO3 has the properties of a ferromagnetic metal with Curie…
The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditional spintronics devices. One promising strategy is using unconventional spin-orbit…
Spin-orbit torques (SOTs) have been widely understood as an interfacial transfer of spin that is independent of the bulk properties of the magnetic layer. Here, we report that SOTs acting on ferrimagnetic FexTb1-x layers decrease and vanish…
The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…