Related papers: Electrically tunable spin-orbit interaction in an …
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement…
Ionic transport in nanofluidic channels holds great promise for applications such as single-molecule analysis, molecular manipulation, and energy harvesting. However, achieving precise control over ion transport remains a major challenge.…
Employing the spin degree of freedom of charge carriers offers the possibility to extend the functionality of conventional electronic devices, while colloidal chemistry can be used to synthesize inexpensive and tuneable nanomaterials. In…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
We demonstrate that spin-orbit coupling (SOC) strength for electrons near the conduction band edge in few-layer $\gamma$-InSe films can be tuned over a wide range. This tunability is the result of a competition between…
We use a combination of experimental techniques to demonstrate a general occurrence of spin-orbit interaction (SOI) in graphene on transition metal dichalcogenide (TMD) substrates. Our measurements indicate that SOI is ultra-strong and…
Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…
Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an…
The introduction of spin-orbit interactions (SOIs) and the subsequent appearance of a two-dimensional (2D) topological phase are crucial for voltage-controlled and zero-emission energy spintronic devices. In contrast, graphene basically…
During the last years there has been much interest, and theoretical discussion, about the possibility to use spin-orbit coupling to control the carriers spins in two-dimensional semiconducting heterostructures. Spin polarization at the…
Recent theoretical and experimental works on carbon nanotubes (CNTs) have revealed that spin-orbit interaction (SOI) is more robust than it was thought. Motivated by this, we investigate the SOI in helically coiled CNTs. Calculations are…
Spin-dependent transport was investigated in a spin metal-oxide-semiconductor field-effect transistors (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. The spin MOSFET of bottom-gate type was fabricated by…
Understanding the flow of spins in magnetic layered structures has enabled an increase in data storage density in hard drives over the past decade of more than two orders of magnitude1. Following this remarkable success, the field of…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
Broken symmetries in graphene affect the massless nature of its charge carriers. We present an analysis of scattering by defects in graphene in the presence of spin-orbit interactions (SOIs). A characteristic constant ratio ($\simeq 2$) of…
The spin-orbit interaction and spin-relaxation mechanisms of a shallow InAs quantum well heterostructure are investigated by magnetoconductance measurements as a function of an applied top-gate voltage. The data were fit using the…
Electron spins in a two-dimensional electron gas (2DEG) can be manipulated by spin-orbit (SO) fields originating from either Rashba or Dresselhaus interactions with independent isotropic characteristics. Together, though, they produce…
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. The low temperature carrier mobility of the samples studied ranged from 18.4 to 39.5 m2V-1s-1 with carrier densities between 1.5x1015 and…
The broken inversion symmetry at interfaces of complex oxides gives rise to emergent phenomena, including ferromagnetism and Rashba spin-orbit coupling (SOC), which profoundly influence the electronic structure by entangling spin and…