Related papers: Fabrication and transfer print based integration o…
Effective light extraction from optically active solid-state spin centres inside high-index semiconductor host crystals is an important factor in integrating these pseudo-atomic centres in wider quantum systems. Here we report increased…
Applications such as augmented and virtual reality (AR/VR), optical atomic clocks, and quantum computing require photonic integration of (near-)visible laser sources to enable commercialization at scale. The heterogeneous integration of…
In this paper we present a reliable process to fabricate GaN/AlGaN one dimensional photonic crystal (1D-PhC) microcavities with nonlinear optical properties. We used a heterostructure with a GaN layer embedded between two Distributed Bragg…
We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…
Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance.…
Metasurfaces enable precise control over the properties of light and hold promise for commercial applications. However, fabricating visible metasurfaces suitable for high-volume production is challenging and requires scalable processes.…
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing, imaging, and free-space communications. With this…
Here we report the development of high-efficiency microscale GaAs laser power converters, and their successful transfer printing onto silicon substrates, presenting a unique, high power, low-cost and integrated power supply solution for…
As the characteristic dimensions of modern top-down devices are getting smaller, such devices reach their operational limits given by quantum mechanics. Thus, two-dimensional (2D) structures appear as one of the best solutions to meet the…
Metalenses built up by artificial sub-wavelength nanostructures have shown the capability of realizing light focusing with miniature lens size. To date, most of the reported metalenses were patterned using electron beam lithography (EBL),…
Controlled and uniform assembly of "bottom-up" nanowire (NW) materials with high scalability has been one of the significant bottleneck challenges facing the potential integration of nanowires for both nano and macro electronic circuit…
While vertical GaN-on-silicon architectures promise a transformative leap in cost-effective power electronics and high-resolution micro-LEDs, their deployment remains bottlenecked by the high electrical resistance of conventional epitaxial…
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon…
Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
The use of highly efficient and solarblind GaN photocathodes as part of multichannel plate UV detectors for applications in astronomy would strongly benefit from the direct growth of GaN on typical window materials with high transmission…
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible…
AlN layers with thicknesses between 2 and 14 nm were grown on Si(111) substrates by molecular beam epitaxy. The effect of the AlN layer thickness on the morphology and nucleation time of spontaneously formed GaN nanowires (NWs) was…
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of…
Mass production of photonic integrated circuits requires high-throughput wafer-level testing. We demonstrate that optical probes equipped with 3D-printed elements allow for efficient coupling of light to etched facets of nanophotonic…