Related papers: Utilizing photonic band gap in triangular silicon …
Triangular cross-section color center photonics in silicon carbide is a leading candidate for scalable implementation of quantum hardware. Within this geometry, we model low-loss beam splitters for applications in key quantum optical…
Triangular cross-section SiC photonic devices have been studied as an efficient and scalable route for integration of color centers into quantum hardware. In this work, we explore efficient collection and detection of color center emission…
Color centers in wide band gap semiconductors are prominent candidates for solid-state quantum technologies due to their attractive properties including optical interfacing, long coherence times, spin-photon and spin-spin entanglement, as…
Silicon carbide is evolving as a prominent solid-state platform for the realization of quantum information processing hardware. Angle-etched nanodevices are emerging as a solution to photonic integration in bulk substrates where color…
Color center platforms have been at the forefront of quantum nanophotonics for applications in quantum networking, computing, and sensing. However, large-scale deployment of this technology has been stifled by a lack of ability to integrate…
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a scalable array of nanopillars incorporating single silicon…
The recent progress in chip-scale integrated photonics has stimulated the rapid development of material platforms with desired optical properties. Among the different material platforms that are currently investigated, the third-generation…
We design, fabricate, and characterize fishbone grating couplers for triangular cross-section photonics in silicon carbide compatible with color center integration. The periodic and aperiodic grating coupler designs are optimized to…
Optically-addressable solid-state spin defects are promising candidates for storing and manipulating quantum information using their long coherence ground state manifold; individual defects can be entangled using photon-photon interactions,…
Silicon carbide (SiC) is a promising platform for scalable quantum technologies owing to its well-established, wafer-scale industrial processing. SiC also hosts a variety of optically active color centres including the nitrogen vacancy…
Silicon carbide (SiC) displays a unique combination of optical and spin-related properties that make it interesting for photonics and quantum technologies. However, guiding light by total internal reflection can be difficult to achieve,…
Photon pair sources are fundamental building blocks for quantum entanglement and quantum communication. Recent studies in silicon photonics have documented promising characteristics for photon pair sources within the telecommunications…
Quantum photonics plays a crucial role in the development of novel communication and sensing technologies. Color centers hosted in silicon carbide and diamond offer single photon emission and long coherence spins that can be scalably…
With high integration density and excellent optical properties, silicon photonics is becoming a promising platform for complete integration and large-scale optical quantum information processing. Scalable quantum information applications…
Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication, they promise scalable high-efficiency spin-photon…
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are…
Silicon carbide has recently emerged as a promising photonics material due to its unique properties, including possessing strong second- and third-order nonlinear coefficients and hosting various color centers that can be utilized for a…
Recently, a silicon micromachining method to produce tetrahedral silicon particles was discovered. In this report we determine, using band structure calculations, the optical properties of diamond-lattice photonic crystals when assembled…
We present the design, fabrication, and characterization of high quality factor and small mode volume planar photonic crystal cavities from cubic (3C) thin films (thickness ~ 200 nm) of silicon carbide (SiC) grown epitaxially on a silicon…
The identification of a complete three-dimensional (3D) photonic band gap in real crystals always employs theoretical or numerical models that invoke idealized crystal structures. Thus, this approach is prone to false positives (gap wrongly…