The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `T centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
@article{arxiv.2103.07580,
title = {Optical observation of single spins in silicon},
author = {A. T. K. Kurkjian and D. B. Higginbottom and C. Chartrand and E. R. MacQuarrie and J. R. Klein and N. R. Lee-Hone and J. Stacho and C. Bowness and L. Bergeron and A. DeAbreu and N. A. Brunelle and S. R. Harrigan and J. Kanaganayagam and M. Kazemi and D. W. Marsden and T. S. Richards and L. A. Stott and S. Roorda and K. J. Morse and M. L. W. Thewalt and S. Simmons},
journal= {arXiv preprint arXiv:2103.07580},
year = {2021}
}