Artificial atoms in solids are leading candidates for quantum networks, scalable quantum computing, and sensing, as they combine long-lived spins with mobile and robust photonic qubits. The central requirements for the spin-photon interface at the heart of these systems are long spin coherence times and efficient spin-photon coupling at telecommunication wavelengths. Artificial atoms in silicon have a unique potential to combine the long coherence times of spins in silicon with telecommunication wavelength photons in the world's most advanced microelectronics and photonics platform. However, a current bottleneck is the naturally weak emission rate of artificial atoms. An open challenge is to enhance this interaction via coupling to an optical cavity. Here, we demonstrate cavity-enhanced single artificial atoms at telecommunication wavelengths in silicon. We optimize photonic crystal cavities via inverse design and show controllable cavity-coupling of single G-centers in the telecommunications O-band. Our results illustrate the potential to achieve a deterministic spin-photon interface in silicon at telecommunication wavelengths, paving the way for scalable quantum information processing.
@article{arxiv.2302.10230,
title = {Cavity-enhanced single artificial atoms in silicon},
author = {Valeria Saggio and Carlos Errando-Herranz and Samuel Gyger and Christopher Panuski and Mihika Prabhu and Lorenzo De Santis and Ian Christen and Dalia Ornelas-Huerta and Hamza Raniwala and Connor Gerlach and Marco Colangelo and Dirk Englund},
journal= {arXiv preprint arXiv:2302.10230},
year = {2023}
}