Related papers: Integer quantum Hall effect and enhanced g-factor …
High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value…
The quantum Hall effect was originally observed in a two-dimensional electron gas forming Landau levels when exposed to a strong perpendicular magnetic field and was later generalized to Chern insulators without net magnetization. Here,…
The integer quantum Hall state occurs when the Landau levels are fully occupied by the fermions, while the fractional quantum Hall state usually emerges when the Landau level is partially filled by the strongly correlated fermions or…
Our understanding of localization in the integer quantum Hall effect is informed by a combination of semi-classical models and percolation theory. Motivated by the effect of correlations on classical percolation we study numerically…
The scarcity of the fractional quantum Hall effect in higher Landau levels is a most intriguing fact when contrasted with its great abundance in the lowest Landau level. This paper shows that a suppression of the hard core repulsion in…
We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling nu = 4/11 in a very high mobility and low density sample. Measurements were carried out at…
At very large tilt of the magnetic (B) field with respect to the plane of a two-dimensional electron system the transport in the integer quantum Hall regime at $\nu$ = 4, 6, and 8 becomes strongly anisotropic. At these filling factors the…
The fate of integer quantum Hall effect (IQHE) at weak magnetic field is studied numerically in the presence of {\it correlated} disorders. We find a systematic {\it float-up} and {\it merging} picture for extended levels on the low-energy…
Mixing of Landau levels has been understood to be essential in governing the nature of the ground state for the even-denominator fractional quantum Hall effect. The incompressibility of the ground state at filling factor $5/2$ in the strong…
Reports of weak local minima in the magnetoresistance at $\nu=2+3/5$, $2+3/7$, $2+4/9$, $2+5/9$, $2+5/7$, and $2+5/8$ in the second Landau level of the electron gas in GaAs/AlGaAs left open the possibility of fractional quantum Hall states…
We argue that a new type of quantum Hall state requiring non-perturbative Landau level mixing arises at low electron density. In these states, up and down spin electrons pair to form spinless bosons that condense into a bosonic quantum Hall…
By making use of the generalized Landau level representation (GLLR) for the quasiparticle propagator, we study the effect of screening on the properties of the quantum Hall states with integer filling factors in graphene. The analysis is…
On the basis of energy calculations we investigate the competition between quantum-liquid and electron-solid phases in the Landau levels n=1,2, and 3 as a function of their partial filling factor. Whereas the quantum-liquid phases are…
Almost all quantum Hall effect to date can be understood as {\em integral} quantum Hall effect of appropriate particles, namely electrons or composite fermions. This paper investigates theoretically the feasibility of nested states of…
We study the critical spin-polarization energy ($\alpha_{\rm C}$) above which fractional quantum Hall states in two-dimensional electron systems confined to symmetric GaAs quantum wells become fully spin-polarized. We find a significant…
Despite the success of Landau-level theory and edge-state transport formalisms, a direct microscopic link between bulk quantization and the observed hierarchy of quantum Hall plateaus has not been established. In particular, no unified…
The average electron spin-polarization $\cal P$ of two-dimensional electron gas confined in $\rm GaAs/GaAlAs$ multiple quantum-wells was measured by nuclear magnetic resonance (NMR) near the fractional quantum Hall state with filling factor…
Despite many years of efforts, attempts to reach the quantum regime of topological surface states (TSS) on an electrically tunable topological insulator (TI) platform have so far failed on binary TI compounds such as Bi2Se3 due to high…
We present a theory of the magneto-optical Faraday and Kerr effects of topological insulator (TI) films. For film thicknesses short compared to wavelength, we find that the low-frequency Faraday effect in ideal systems is quantized at…
We review our recent theoretical works on the the quantum spin Hall effect. First we compare edge states in various 2D systems, and see whether they are robust or fragile against perturbations. Through the comparisons we see the robust…