Related papers: Integer quantum Hall effect and enhanced g-factor …
The anomalous Hall effect of Fe(CsAu) is investigated. Electrons with spin up and down experience a different degree of specular reflection at the FeCs interface. This yields a different mean free path for the two spin orientations. In the…
We theoretically study the quantum Hall effect (QHE) in graphene with an ac electric field. Based on the tight-binding model, the structure of the half-integer Hall plateaus at $\sigma_{xy} = \pm(n + 1/2)4e^2/h$ ($n$ is an integer) gets…
The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous…
Unlike regular electron spin, the pseudospin degeneracy of Fermi points in graphene does not couple directly to magnetic field. Therefore, graphene provides a natural vehicle to observe the integral and fractional quantum Hall physics in an…
Spin current perpendicular to the electric current is investigated around Landau level filling factor $\nu=3$ in a GaAs/AlGaAs two-dimensional electron system. Measurements of dynamic nuclear polarization in the vicinity of the edge of a…
In a recent paper [Phys.Rev.B.\textbf{84}, 161307 (2011)], experimental data on spin splitting in the integer quantum Hall effect has been reported in a high mobility dilute 2D electron gas with electron density as low as 0.2 $\times$…
The edge and bulk structure of Landau levels (LLs) in a wide channel at the $ \nu =1$ quantum Hall regime is calculated for not-too-low temperatures, $\hbar \omega_{c} \gg k_{B}T\gg \hbar v_{g}/2\ell_{0}$, where $v_{g}$ is the group…
We study the behavior of the extended states of a two-dimensional electron system in silicon in a magnetic field, B. Our results show that the extended states, corresponding to the centers of different Landau levels, merge with the lowest…
We analyze the Landau problem and quantum Hall effect on $S^3$ taking a constant background field proportional to the spin connection on $S^3$. The effective strength of the field can be tuned by changing the dimension of the representation…
Low frequency AC-measurements are commonly used to determine the voltage and currents through mesoscopic devices. We calculate the effect of the alternating Hall voltage on the recorded time-averaged voltage in the presence of a top-gate…
Collective modes of exotic quantum fluids reveal underlying physical mechanisms responsible for emergent complex quantum ground states. We observe unexpected new collective modes in the fractional quantum Hall (FQH) regime:…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
Strong correlation brings a rich array of emergent phenomena, as well as a daunting challenge to theoretical physics study. In condensed matter physics, the fractional quantum Hall effect is a prominent example of strong correlation, with…
The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a…
We analyze the entanglement entropy, in real space, for the higher dimensional integer quantum Hall effect on ${\mathbb {CP}}^k$ (any even dimension) for abelian and nonabelian magnetic background fields. In the case of $\nu=1$ we perform a…
The Chern-Simons Ginzburg-Landau theory for the fractional Quantum Hall effect is studied in the presence of a confining potential. We review the bulk properties of the model and discuss how the plateau formation emerges without any…
Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities,…
Magnetotransport measurements on two-dimensional electrons confined to wide GaAs quantum wells reveal a remarkable evolution of the ground state at filling factor $\nu=1/2$ as we tilt the sample in the magnetic field. Starting with a…
We report the first unambiguous observation of a fractional quantum Hall state in the Landau level of a two-dimensional hole sample at the filling factor $\nu=8/3$. We identified this state by a quantized Hall resistance and an activated…
We focused on the transverse AC magneto-conductance of a high mobility $p$-GaAs/AlGaAs quantum well ($p=1.2\times 10^{11}$~cm$^{-2}$) in the vicinity of two values of the Landau level filling factor $\nu$: $\nu =1$ (integer quantum Hall…