Related papers: Non-destructive Depth-Resolved Characterization of…
Dark-field X-ray microscopy (DFXM) is a nondestructive full-field imaging technique providing three dimensional mapping of microstructure and local strain fields in deeply embedded crystalline elements. This is achieved by placing an…
We present germanium microdisk optical resonators under a large biaxial tensile strain using a CMOS-compatible fabrication process. Biaxial tensile strain of ~0.7% is achieved by means of a stress concentration technique that allows the…
X-ray diffraction with high spatial resolution is commonly used to characterize (poly-)crystalline samples with, for example, respect to local strain, residual stress, grain boundaries and texture. However, the investigation of highly…
Quasi-two-dimensional (quasi-2D) materials hold promise for future electronics because of their unique band structures that result in electronic and mechanical properties sensitive to crystal strains in all three dimensions. Quantifying…
Dark field X-ray microscopy (DFXM) is an experimental technique employed to investigate material properties by probing their 'mesoscale,' or microscale structures, in a bulk-sensitive manner using hard X-rays at synchrotron radiation…
Chemomechanical interactions in gas or liquid environments are crucial for the functionality and longevity of various materials used in sustainable energy technologies, such as rechargeable batteries, water-splitting catalysts, and…
Reconstruction and monitoring of displacement and strain fields is an important problem in engineering. We analyze the remote and non-obtrusive methods of strain measurement based on photogrammetry and Digital Image Correlation (DIC). The…
We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk…
The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-temperature X-ray diffraction (HT-XRD), reciprocal space…
Validating material performance in electrical devices is crucial to product development. For Gallium Nitride (GaN) devices, evaluating material factors such as defects, dopant concentration, and overall production quality is essential to…
Scanning transmission X-ray microscopy (STXM) is a nanoscale imaging technique that can utilize several powerful contrast mechanisms for the quantitative mapping of chemical and physical materials properties. Spatial resolutions down to…
The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers present. This stress gradient can change many of the material…
Bulk-mode acoustic waves in a crystalline material exert lattice strain through the thickness of the sample, which couples to the spin Hamiltonian of defect-based qubits such as the nitrogen-vacancy (NV) center defect in diamond. This…
We consider a method for neutron residual strain/stress analysis combining features of transmission strain tomography (e.g. through Braggs edge imaging) and neutron diffraction techniques. Analogous to transmission strain tomography, our…
Advancements in fast electron detectors have enabled the statistically significant sampling of crystal structures on the nanometre scale by means of Scanning Electron Nanobeam Diffraction (SEND). Characterisation of structural similarity…
Resolving how defects emerge and interact within the hierarchical structure of polycrystalline materials remains a core challenge in materials science. Grain-mapping methods such as three-dimensional X-ray diffraction (3DXRD) and…
Emerging gallium nitride (GaN) vertical power devices require high-quality GaN crystals with reduced crystal defects, especially threading dislocations (TDs), to harness the high critical electric field and electron mobility of the…
The structures, strain fields, and defect distributions in solid materials underlie the mechanical and physical properties across numerous applications. Many modern microstructural microscopy tools characterize crystal grains, domains and…
Strain and defects in crystalline materials are responsible for the distinct mechanical, electric and magnetic properties of a desired material, making their study an essential task in material characterization, fabrication and design.…
The lateral resolution of an X-ray photoelectron spectroscopy instrument, which is equipped with a focused X-ray beam, is limited by the nominal X-ray beam diameter and the long tail intensity distri-bution of the X-ray beam. The long tail…