Related papers: Electrically-driven Photonic Crystal Lasers with U…
Interest in photonic crystal nanocavities is fueled by advances in device performance, particularly in the development of low-threshold laser sources. Effective electrical control of high performance photonic crystal lasers has thus far…
Efficient, low threshold, and compact semiconductor laser sources are being investigated for many applications in high-speed communications, information processing, and optical interconnects. The best edge-emitting and vertical cavity…
A photonic crystal (PhC) nanocavity formed in an optically very thick slab can support reasonably high-Q modes for lasing. Experimentally, we demonstrate room-temperature pulsed lasing operation from the PhC dipole mode emitting at 1324 nm,…
Thin film lithium niobate (TFLN) has become an platform for modern integrated circuits due to its excellent optical properties. With the development of rare earth ion doped TFLN, important breakthroughs of on-chip microlasers has emerged…
We describe an efficient surface-passivated photonic crystal nanocavity laser, demonstrating room-temperature operation with 3-ps total pulse duration (detector response limited) and low-temperature operation with ultra-low-threshold near…
Engineering the electromagnetic environment of a nanoscale light emitter by a photonic cavity can significantly enhance its spontaneous emission rate through cavity quantum electrodynamics in the Purcell regime. This effect can greatly…
Photonic crystal lasers operating at room temperature based on high Q/V nanobeam cavities have been demonstrated. We reported a large spontaneous emission factor (~0.97) by fitting the L-L curve with the rate equations.
We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high…
We provide a numerical study showing that a bottom reflector is indispensable to achieve unidirectional emission from a photonic-crystal (PhC) nanolaser. First, we study a PhC slab nanocavity suspended over a flat mirror formed by a…
Sub-threshold measurements of a photonic crystal (PC) microcavity laser operating at 1.3 microns show a linewidth of 0.10 nm, corresponding to a quality factor Q ~ 1.3x10^4. The PC microcavity mode is a donor-type mode in a graded square…
Nanolasers, characterized by enhanced optical localization at subwavelength scale, have emerged as promising coherent light sources for ultra-compact, high-speed and energy-efficient photonic integrated circuits. Twisted photonic crystal…
We demonstrate a photonic crystal nanolaser exhibiting an ultra-low threshold of 730 nA at telecom wavelengths. The laser can be directly modulated at 3 GHz at an energy cost of 1 fJ/bit. This is the lowest threshold reported for any laser…
Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically…
We first experimentally demonstrated a transverse magnetic (TM) mode laser in a Photonic crystal (PhC) slab structure at room temperature. This study proposes a PhC nanobeam (NB) cavity to support a high-quality-factor (Q-factor) TM mode.…
We report the demonstration of continuous-wave (CW) lasing at room temperature from a III-V semiconductor nanowire integrated into a Si photonic crystal (PhC) cavity. Conventional hybrid nanowire lasers [M. Takiguchi. et.al., APL Photonics,…
The efficiency and operating range of a photonic crystal laser is improved by passivating the InGaAs quantum well (QW) gain medium and GaAs membrane using an (NH4)S treatment. The passivated laser shows a four-fold reduction in nonradiative…
We demonstrate a photonic crystal nanocavity laser essentially driven by a self-assembled InAs/GaAs single quantum dot gain. The investigated nanocavities contain only 0.4 quantum dots on an average; an ultra-low density quantum dot sample…
GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all GeSn lasers reported to date have large device footprints and…
Semiconductor lasers with ultra-low thresholds and minimal footprints are a topic of active research. Such devices require a combination of high quality factor laser cavities with small active region volumes, which drives the quest for…
We model carrier transport in photonic crystal lasers with lateral current injection through two-dimensional (2D) finite-volume simulations. Though such lasers can achieve ultra-low threshold currents, leakage paths reduce the carrier…