Related papers: Suppression of back-tunnelling events in hybrid si…
Hybrid turnstiles have proven to generate accurate single-electron currents. The usual operation consists of applying a periodic modulation to a capacitively coupled gate electrode and requires a non-zero DC source-drain bias voltage. Under…
We perform in-situ detection of individual electrons pumped through a single-electron turnstile based on ultrasmall normal metal - insulator - superconductor tunnel junctions. In our setup, limited by the detector bandwidth, at low…
We present an experimental study of hybrid turnstiles with high charging energies in comparison to the superconducting gap. The device is modeled with the sequential tunneling approximation. The backtunneling effect is shown to limit the…
The basis of synchronous manipulation of individual electrons in solid-state devices was laid by the rise of single-electronics about two decades ago. Ultra-small structures in a low temperature environment form an ideal domain of…
In this Letter, we present a theoretical analysis to single-electron pumping operation in a large range of driving frequencies through the time-dependent tunneling barriers controlled by external gate voltages. We show that the…
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional…
We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under…
We discuss the operation of the superconductor - insulator - normal-metal - insulator - superconductor (SINIS) turnstile. This voltage-biased hybrid single-electron transistor (SET) provides current quantization even with only one…
The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…
We investigate the properties of a hybrid single electron transistor, involving a small superconducting island sandwiched between normal metal leads, which is driven by dc plus ac voltages. In order to describe its properties we derive from…
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment. The device includes a local Cr resistor on one side of the turnstile, and a…
We experimentally characterise the impedance of a single electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. Differently from usual rf-SET operations, the excitation signal is applied to the gate of…
We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
We report on the realization of a single-electron source, where current is transported through a single-level quantum dot (Q), tunnel-coupled to two superconducting leads (S). When driven with an ac gate voltage, the experiment demonstrates…
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel…
In this Letter, we study the transient electron transfer phenomena of single-electron devices with alternating external gate voltages. We obtain a high frequency limit for pumping electrons one at a time in single-electron devices. Also, we…
We study the electron transport through a system of two low-capacitance metal islands connected in series between two electrodes. The work is motivated in part by experiments on semiconducting double-dots, which show intriguing effects…
A single electron shared between two levels threaded by a magnetic flux is an irreducibly simple quantum system in which interference is predicted to occur. We demonstrate tuning of the tunnel coupling between two such electronic levels…
The electron tunneling through a molecular junction modeled by a single site weakly coupled to two leads is studied in the presence of a time-dependent external field using a master equation approach. In the case of small bias voltages and…