Related papers: Intrinsic Layer-Polarized Anomalous Hall Effect in…
Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed…
The integrated Berry curvature is a geometric property that has dramatic implications for material properties. This study investigates the integrated Berry curvature and other contributions to the anomalous Hall effect in CrGeTe$_3$ as a…
The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been…
Exotic quantum phenomena have been demonstrated in recently discovered intrinsic magnetic topological insulator MnBi2Te4. At its two-dimensional limit, quantum anomalous Hall (QAH) effect and axion insulator state are observed in odd and…
Anomalous Hall effect (AHE) can be induced by intrinsic mechanism due to the band Berry phase and extrinsic one arising from the impurity scattering. The recently discovered magnetic Weyl semimetal Co3Sn2S2 exhibits a large intrinsic…
Intrinsic anomalous Hall effect (AHE) formulated by geometric properties of Bloch wavefunctions is a ubiquitous transport phenomenon not limited to magnetic systems but also allowed in non-magnetic ones under an external field breaking…
Spin current generated electrically is among the core phenomena of spintronics for driving high-performance spin device applications. Here, on the basis of systematic investigations for the hole doped single-layer Haldane-Hubbard(HH) model,…
A unified theory of the anomalous Hall effect (AHE) is presented for multi-band ferromagnetic metallic systems with dilute impurities. In the clean limit, the AHE is mostly due to the extrinsic skew-scattering. When the Fermi level is…
The anomalous Hall effect (AHE) of epitaxial SrRuO$_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO$_3$ thin films were deposited on SrTiO$_3$ substrates directly, or using…
The anomalous Hall effect describes the generation of a transverse voltage by a longitudinal current even in the absence of an external magnetic field. While typically observed in ferromagnets, it has also been predicted to arise in…
We report the observation of a quantum anomalous Hall effect in twisted bilayer graphene showing Hall resistance quantized to within .1\% of the von Klitzing constant $h/e^2$ at zero magnetic field.The effect is driven by intrinsic strong…
Progress in magnetoelectric materials is hindered by apparently contradictory requirements for time-reversal symmetry broken and polar ferroelectric electronic structure in common ferromagnets and antiferromagnets. Alternative routes could…
We theoretically investigate an intrinsic nonlinear anomalous Hall effect (INAHE) in space-time ($\mathcal{PT}$) symmetric antiferromagnetic metals. The INAHE is characterized by an asymmetric and non-dissipative part of the second-order…
Since the discovery of the anomalous Hall effect (AHE), the anomalous Hall conductivity (AHC) has been thought to be zero when there is no net magnetization. However, the recently found relation between the intrinsic AHE and the Berry…
Though Weyl fermions have recently been observed in several materials with broken inversion symmetry, there are very few examples of such systems with broken time reversal symmetry. Various Co$_{2}$-based half-metallic ferromagnetic Heusler…
We propose a novel nonlinear dynamical Hall effect characteristic of layered materials with chiral symmetry, which is driven by the joint action of in-plane and time variation of out-of-plane ac fields…
We conducted a comprehensive analysis of the magnetic and electronic transport properties of the layered chalcogenide Cr$_{1+\delta}$Te$_2$ in its single crystalline form. This material exhibits a ferromagnetic transition at a critical…
The scaling of anomalous Hall resistivity on the longitudinal resistivity has been intensively studied in the different magnetic systems, including multilayers and granular films, to examine which mechanism, skew scattering or side-jump,…
We demonstrate precise control of magnetism in MnBi2Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures,…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…