Related papers: Intrinsic Layer-Polarized Anomalous Hall Effect in…
The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials. The previous studies primarily concentrate on the…
The large anomalous Hall effect (AHE) in antiferromagnetic (AF) materials arises from symmetry breaking equivalent to a ferromagnetic (FM) state. Consequently, this suggests that the observed AHE is induced by the intrinsic mechanism of the…
Materials combining electrically switchable ferroelectricity and tunable topological states hold significant promise for advancing both foundamental quantum phenomena and innovative device architectures. Here, we employ first-principles…
The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus…
The effects of spin-orbit coupling and symmetry breaking at the interface between a ferromagnet and heavy metal are particularly important for spin-based information storage and computation. Recent discoveries suggest they can create chiral…
Quantum anomalous Hall effect (QAHE) is a fundamental quantum transport phenomenon in condensed matter physics. Until now, the only experimental realization of the QAHE has been observed for Cr/V-doped (Bi,Sb)$_2$Te$_3$ but at extremely low…
A comparative study of anomalous-Hall current injection and anisotropic current injection (through planar Hall effect) are studied in Hall devices contacted to a lateral load circuit. Hall currents are injected into the load circuit from…
The layer Hall effect is an intriguing phenomenon observed in magnetic topological layered materials, where the Hall response arises from the opposite deflection of electrons on top and bottom layers. To realize layer Hall effect,…
A notion of the Berry phase is a powerful means to unravel the non-trivial role of topology in various novel phenomena observed in chiral magnetic materials and structures. A celebrated example is the intrinsic anomalous Hall effect (AHE)…
We uncover a new origin of the planar Hall effect - as an intrinsic property of layer coherent electrons - that exists even in bilayer and trilayer atomically thin limit. It reforms the existing theories requiring three-dimensional orbital…
In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic…
The Hall effect, ever intriguing since its discovery, has spurred the exploration of its phenomena, intensified by advances in topology and novel materials. Differentiating the ordinary Hall effect from extraordinary properties like the…
The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…
In the $R$Al(Si,Ge) ($R$: lanthanides) family, both spatial inversion and time-reversal symmetries are broken. This may offer opportunities to study Weyl-fermion physics in nontrivial spin structures emerging from a noncentrosymmetric…
The anomalous Hall effect has considerable impact on the progress of condensed matter physics and occurs in systems with time-reversal symmetry breaking. Here we theoretically investigate the anomalous Hall effect in nonmagnetic…
The magnetic topological insulator MnBi$_{6}$Te$_{10}$ has emerged as a promising candidate for realizing the quantum anomalous Hall effect (QAHE), owing to its ability to retain ferromagnetism through precise control of anti-site defects.…
This review presents recent breakthroughs in the realm of nonlinear Hall effects, emphasizing central theoretical foundations and recent experimental progress. We elucidate the quantum origin of the second-order Hall response, focusing on…
The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of…
The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent…
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley…