English

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films

Mesoscale and Nanoscale Physics 2024-01-23 v1

Abstract

In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.

Keywords

Cite

@article{arxiv.2401.11450,
  title  = {Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films},
  author = {Yuanzhao Li and Yunhe Bai and Yang Feng and Jianli Luan and Zongwei Gao and Yang Chen and Yitian Tong and Ruixuan Liu and Su Kong Chong and Kang L. Wang and Xiaodong Zhou and Jian Shen and Jinsong Zhang and Yayu Wang and Chui-Zhen Chen and XinCheng Xie and Xiao Feng and Ke He and Qi-Kun Xue},
  journal= {arXiv preprint arXiv:2401.11450},
  year   = {2024}
}

Comments

15 pages, 4 figures