Related papers: Understanding RowHammer Under Reduced Wordline Vol…

RowHammer is a circuit-level DRAM vulnerability where repeatedly accessing (i.e., hammering) a DRAM row can cause bit flips in physically nearby rows. The RowHammer vulnerability worsens as DRAM cell size and cell-to-cell spacing shrink.…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…

As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…

This retrospective paper describes the RowHammer problem in Dynamic Random Access Memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 conference~\cite{rowhammer-isca2014}. RowHammer is a prime (and perhaps the…

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…

RowHammer stands out as a prominent example, potentially the pioneering one, showcasing how a failure mechanism at the circuit level can give rise to a significant and pervasive security vulnerability within systems. Prior research has…

Modern DRAM is vulnerable to read disturbance (e.g., RowHammer and RowPress) that significantly undermines the robust operation of the system. Repeatedly opening and closing a DRAM row (RowHammer) or keeping a DRAM row open for a long…

RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process…

As process technology scales down to smaller dimensions, DRAM chips become more vulnerable to disturbance, a phenomenon in which different DRAM cells interfere with each other's operation. For the first time in academic literature, our ISCA…

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by keeping a DRAM row open…

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attackers leverage RowHammer bitflips in real systems to take over…

We will discuss the RowHammer problem in DRAM, which is a prime (and likely the first) example of how a circuit-level failure mechanism in Dynamic Random Access Memory (DRAM) can cause a practical and widespread system security…

RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics.…

Memory isolation is critical for system reliability, security, and safety. Unfortunately, read disturbance can break memory isolation in modern DRAM chips. For example, RowHammer is a well-studied read-disturb phenomenon where repeatedly…

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different DRAM read disturbance phenomena. RowHammer induces bitflips…

The Rowhammer vulnerability poses an increasing challenge with newer generations of DRAM and aggressive technology scaling. Existing mitigation techniques, such as Graphene, Twice, and Hydra, primarily rely on tracking activation counts for…