Related papers: Transient spin injection efficiencies at ferromagn…
Ultrafast spin dynamics on femto- to picosecond timescales is simulated within a density-operator approach for a Co/Cu bilayer. The electronic structure is represented in a tight-binding form; during the evolution of the density operator,…
The exchange stiffness is a central material parameter of all ferromagnetic materials. Its value controls the Curie temperature as well as the dynamic properties of spin waves to a large extend. Using ultrashort spin current pulses we…
Using neutron inelastic scattering, we investigate the role of interstitial iron on the low-energy spin fluctuations in powder samples of Fe_{1+x}Te_{0.7}Se_{0.3}. We demonstrate how combining the principle of detailed balance along with…
An ultrafast spin current can be induced by femtosecond laser excitation in a ferromagnetic (FM) thin film in contact with a nonmagnetic (NM) metal. The propagation of an ultrafast spin current into NM metal has recently been found in…
We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these…
The ultrafast response to an optical pulse excitation of the spin-spin exchange interaction in transition metal anti-ferromagnets is studied within the framework of the time-dependent spin-density functional theory. We propose a formulation…
We report that spin current transport across Pt-ferromagnet (FM) interfaces is strongly dependent on the type and the thickness of the FM layer and on post-deposition processing protocols. By employing both harmonic voltage measurements and…
The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a…
The quest for a spin-polarized organic light emitting diode (spin-OLED) is a common goal in the emerging fields of molecular electronics and spintronics. In this device two ferromagnetic electrodes are used to enhance the…
The injection of spin polarized electrons from ferromagnetic metals (Fe and Co) into gallium nitride (GaN) via scanning tunneling microscopy (STM) is demonstrated. Electrons from STM tips are injected into the semiconductor. Net circular…
Ferromagnetic semiconductor europium monoxide (EuO) is believed to be an effective spin injector when directly integrated with silicon. Injection through spin-selective ohmic contact requires superb structural quality of the interface…
Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…
We report measurement of a spin pumping effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced damping was observed around the IrMn magnetic phase…
Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a…
Spin-orbit interaction (SOI) have provided a new viable roadmap for the development of spin-based photonics devices. However, existing strategies to control the SOI focus commonly on tailoring the spatial dimension of light fields yet…
The ability to control spins in semiconductors is important in a variety of fields including spintronics and quantum information processing. Due to the potentially fast dephasing times of spins in the solid state [1-3], spin control…
The increasing demand for higher data volume and faster transmission in modern wireless telecommunication systems has elevated requirements for 5G high-band RF hardware. Spin-Wave technology offers a promising solution, but its adoption is…
Spin-orbit torque manifested as an accumulated spin-polarized moment at nonmagnetic normal metal, and ferromagnet interfaces is a promising magnetization switching mechanism for spintronic devices. To fully exploit this in practice,…
In this paper one can find a detailed description of the research performed by author during his stay at IMEC (Belgium). It deals with the experimental verification of the highly coherent electron spin transport across ferromagnetic metal /…
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of…