Highly efficient spin transport in epitaxial graphene on SiC
Abstract
Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.
Keywords
Cite
@article{arxiv.1307.1555,
title = {Highly efficient spin transport in epitaxial graphene on SiC},
author = {Bruno Dlubak and Marie-Blandine Martin and Cyrile Deranlot and Bernard Servet and Stéphane Xavier and Richard Mattana and Mike Sprinkle and Claire Berger and Walt A. De Heer and Frédéric Petroff and Abdelmadjid Anane and Pierre Seneor and Albert Fert},
journal= {arXiv preprint arXiv:1307.1555},
year = {2013}
}