Related papers: Transient spin injection efficiencies at ferromagn…
The observation of micron size spin relaxation makes graphene a promising material for applications in spintronics requiring long distance spin communication. However, spin dependent scatterings at the contact/graphene interfaces affect the…
The idea to utilize not only the charge but also the spin of electrons in the operation of electronic devices has led to the development of spintronics, causing a revolution in how information is stored and processed. A novel advancement…
This year the discovery of femtosecond demagnetization by laser pulses is 20 years old. For the first time this milestone work by Bigot and coworkers gave insight in a very direct way into the time scales of microscopic interactions that…
We study the physical properties of a half-metallic ferromagnet$\mid$superconductor (HM$\mid$S) bilayer, allowing for an arbitrary bulk pairing symmetry of the superconductor and spin-dependent processes at the interface. In particular, we…
The spin- and energy-dependent interface reflectivity of a ferromagnetic (FM) film in contact with a nonmagnetic (NM) film is calculated using a first-principles transport method and incorporated into the superdiffusive spin transport model…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the…
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a…
We consider a heterostructure consisting of a normal metal and a superconductor separated by a spin-active interface. At finite-bias voltages, spin-filtering and spin-mixing effects at the interface allow for an induced magnetization (spin…
Symmetry lowering at an interface leads to an enhancement of the effect of spin-orbit coupling and to a discontinuity of spin currents passing through the interface. This discontinuity is characterized by a "spin-memory loss" (SML)…
We report a first principles study of spin-transport under finite bias through a graphene-ferromagnet (FM) interface, where FM=Co(111), Ni(111). The use of Co and Ni electrodes achieves spin efficiencies reaching 80% and 60%, respectively.…
Spin-photon interfaces (SPIs) are key devices of quantum technologies, aimed at coherently transferring quantum information between spin qubits and propagating pulses of polarized light. We study the potential of a SPI for quantum non…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficiency of spin-orbit torque technologies. Here we report that…
We report on nonlocal transport in superconductor hybrid structures, with ferromagnetic as well as normal-metal tunnel junctions attached to the superconductor. In the presence of a strong Zeeman splitting of the density of states, both…
Employing electron spin instead of charge to develop spintronic devices holds the merits of low-power consumption in information technologies. Meanwhile, the demand for increasing speed in spintronics beyond current CMOS technology has…
Femtosecond laser excitation of materials that exhibit magnetic spin textures promises advanced magnetic control via the generation of ultrafast and non-equilibrium spin dynamics. We explore such possibilities in ferrimagnetic [Fe(0.35…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
Spintronic structures are extensively investigated for their spin orbit torque properties, required for magnetic commutation functionalities. Current progress in these materials is dependent on the interface engineering for the optimization…
Injection and detection of spin accumulation in a semiconductor having localized states at the interface is evaluated. Spin transport from a ferromagnetic contact by sequential, two-step tunneling via interface states is treated not in…
In spin-based electronics, information is encoded by the spin state of electron bunches. Processing this information requires the controlled transport of spin angular momentum through a solid, preferably at frequencies reaching the so far…