Related papers: Field-free spin-orbit torque switching enabled by …

The spin-orbit torque device is promising as a candidate for next generation magnetic memory, while the static in-plane field needed to induce deterministic switching is a main obstacle for its application in highly integrated circuits.…

Non-reciprocal spin wave can facilitate the realization of spin wave logic devices. It has been demonstrated that the non-reciprocity can emerge when an external magnetic field is applied to chiral magnets, of which spin structures depend…

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…

Using type-x spin-orbit torque (SOT) switching scheme, in which the easy axis (EA) of the ferromagnetic (FM) layer and the charge current flow direction are collinear, is possible to realize a lower-power-consumption, higher-density, and…

The Dzyaloshinskii-Moriya interaction (DMI) is an antisymmetric exchange interaction, which is responsible for the formation of topologically protected spin textures in chiral magnets. Here, by measuring the dispersion relation of the DM…

Using first-principle calculations, we demonstrate several approaches to manipulate Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin magnetic films. First, we find that DMI is significantly enhanced when the ferromagnetic (FM) layer is…

We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…

For deterministic magnetization switching by spin-orbit torque (SOT) in a perpendicular magnetic anisotropy system, an additional in-plane direction magnetic field is essential for deterministic switching by breaking the magnetization…

The interfacial Dzyaloshinskii-Moriya interaction (DMI) in multilayers of heavy metal and ferromagnetic metals enables the stabilization of novel chiral spin structures such as skyrmions. Magnetic insulators, on the other hand can exhibit…

Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the…

Application of sufficient lateral current to a heavy metal (HM) can switch the perpendicular magnetization orientation of adjacent ferromagnetic layer (FM) through spin-orbit torques (SOTs). The choice of the HM and its arrangement plays a…

We studied the spin torque efficiency and the Dzyaloshinskii-Moriya interaction (DMI) of heterostructures that contain interface(s) of Ir and Co. The current-induced shifts of the anomalous Hall loops were used to determine the spin torque…

The Dzyaloshinskii-Moriya interaction (DMI) has been shown to stabilise Ne\'{e}l domain walls in magnetic thin films, allowing high domain wall velocities driven by spin current effects. DMI occurs at the interface between ferromagnetic and…

The magnetic interfacial Dzyaloshinskii-Moriya interaction (DMI) in multi-layered thin films can lead to exotic chiral spin states, of paramount importance for future spintronic technologies. Interfacial DMI is normally manifested as an…

The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching…

Write asymmetry, the significantly different write current for high-to-low and low-to-high resistance switching because of natural stochastic behaviors of magnetization, is a fundamental issue in magnetic random-access memory (MRAM). For…

Both applied electric currents and magnetization dynamics modify the Dzyaloshinskii-Moriya interaction (DMI), which we call current-induced DMI (CIDMI) and dynamical DMI (DDMI), respectively. We report a theory of CIDMI and DDMI. The…

Spin-orbit torque (SOT) magnetization switching of ferromagnets with large perpendicular magnetic anisotropy has a great potential for the next-generation non-volatile magnetoresistive random-access memory (MRAM). It requires a…

Dzyaloshinskii-Moriya interaction (DMI) is the primary mechanism for realizing real-space chiral spin textures, which are regarded as key components for the next-generation spintronics. However, DMI arises from a perturbation term of the…

The spin-orbit torque, a torque induced by a charge current flowing through the heavy-metal conducting layer with strong spin-orbit interactions, provides an efficient way to control the magnetization direction in heavy-metal/ferromagnet…