Related papers: Field-free spin-orbit torque switching enabled by …
Spin-orbit torque (SOT) provides an efficient way to achieve charge-to-spin conversion and can switch perpendicular magnetization, which is essential for designing novel energy-efficient spintronic devices. An out-of-plane SOT could…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires…
This paper investigates the relationship among interlayer exchange coupling (IEC), Dzyaloshinskii-Moriya interaction (DMI), and multilevel magnetization switching within a Co/Pt/Co heterostructure, where varying Pt thicknesses enable…
We propose a field-free switching mechanism that utilizes two spatially orthogonal spin-orbit torque (SOT) currents. Initially applied simultaneously, one of the currents is subsequently switched off. The superposition of these two currents…
With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when…
A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to current random access memory technologies due to its non-volatility, fast operation and high endurance. STT-MRAM does though have…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…
Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…
The interfacial Dyzaloshinskii-Moria interaction (DMI) helps to stabilize chiral domain walls and magnetic skyrmions, which will facilitate new magnetic memories and spintronics logic devices. The study of interfacial DMI in perpendicularly…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
We study the effect of the Dzyaloshinskii-Moriya interaction (DMI) on current-induced magnetic switching of a perpendicularly magnetized heavy-metal/ferromagnet/oxide trilayer both experimentally and through micromagnetic simulations. We…
Current-induced magnetization switching by spin-orbit torque (SOT) holds considerable promise for next generation ultralow-power memory and logic applications. In most cases, generation of spin-orbit torques has relied on an external…
We report the thickness dependence of Dzyaloshinskii-Moriya interaction (DMI) and spin-orbit torques (SOTs) in Pt\Co(t)\AlOx, studied by current-induced domain wall (DW) motion and second-harmonic experiments. From the DW motion study, a…
Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy…
Enabling field-free current-induced switching of perpendicular magnetization is essential for advancing spin-orbit-torque magnetic random access memory technology. Our research on the Pt/Co/Ru/RuO2(101) system has successfully demonstrated…
In this work, we have studied the spin dynamics of a synthethic Antiferromagnet (SAFM)$|$Heavy Metal (HM)$|$Ferromagnet (FM) double barrier magnetic tunnel junction (MTJ) in presence of Ruderman-Kittel-Kasuya-Yoside interaction (RKKYI),…
The performance and reliability of spin-transfer torque magnetic random-access memory (STT-MRAM) can be compromised by anomalous switching behavior, especially during high-speed operations. One such anomaly, known as the "ballooning effect"…