Related papers: Strain driven conducting domain walls in a Mott in…
We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…
The control of the dielectric and conductive properties of device-level systems is important for increasing the efficiency of energy- and information-related technologies. In some cases, such as neuromorphic computing, it is desirable to…
Exploiting the emerging nanoscale periodicities in epitaxial, single-crystal thin films is an exciting direction in quantum materials science: confinement and periodic distortions induce novel properties. The structural motifs of interest…
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM)…
The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications, from electronic circuits to synapses in neural cells. Conversely,…
We investigate the mesoscopic disorder induced rms conductance variance $\delta G$ in a few layer graphene nanoribbon (FGNR) contacted by two superconducting (S) Ti/Al contacts. By sweeping the back-gate voltage, we observe pronounced…
The dynamics of magnetic domain walls along ferromagnetic strips with spatially modulated perpendicular magnetic anisotropy is theoretically studied by means of micromagnetic simulations. Ferromagnetic layers with a periodic sawtooth…
Quantum anomalous Hall insulators are topologically characterized by non-zero integer Chern numbers, the sign of which depends on the direction of the exchange field that breaks time-reversal symmetry. This feature allows the manipulation…
Domain wall propagation has been measured in continuous, weakly disordered, quasi-two-dimensional, Ising-like magnetic layers that are subject to spatially periodic domain wall pinning potentials. The potentials are generated…
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-called conduction gap. Since strain accumulates in…
We theoretically study magnetic ground states of doped zigzag graphene nanoribbons and the emergence of topological domain walls. Using the Hartree-Fock mean-field approach and an effective continuum model, we demonstrated that the carrier…
Nucleation of domain walls by current-driving a single domain wall, confined to the junction area of two symmetrical strips, is investigated using systematic micromagnetic simulations. Secondary domain walls (equivalently, bits encoded in…
Recent studies have predicted extraordinary properties for transverse domain walls in cylindrical nanowires: zero depinning current, the absence of the Walker breakdown, and applications as domain wall oscillators. In order to reliably…
It has been proposed that the microwave-induced ``zero-resistance'' phenomenon, observed in a GaAs two-dimensional electron system at low temperatures in moderate magnetic fields, results from a state with multiple domains, in which a large…
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a…
We investigated the temperature dependence of the conductance fluctuations in thin films of the quasi-two-dimensional 1T-TaS$_2$ van der Waals material. The conductance fluctuations, determined from the derivative current-voltage…
Gate patterning on semiconductors is routinely used to electrostatically restrict electron movement into reduced dimensions. At cryogenic temperatures, where most studies are carried out, differential thermal contraction between the…
Charge manipulation and fabrication of stable domain patterns in ferroelectric materials by scanning probe microscopy open up broad avenues for the development of tunable electronics. Harnessing the polarization energy and electrostatic…
4Hb-TaS2 has been proposed to possess unconventional superconductivity with broken time reveral symmetry due to distinctive layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave…
We theoretically investigate the transfer of angular momentum between a spin superfluid and a domain wall in an exchange coupled easy-axis and easy-plane magnetic insulator system. A domain wall in the easy-axis magnet absorbs spin angular…