Related papers: Strain driven conducting domain walls in a Mott in…
Experimental insight in the nanoscale dynamics underlying switching in novel memristive devices is limited owing to the scarcity of techniques that can probe the electronic structure of these devices. Scattering scanning near-field optical…
The demonstration of the generation and control of a pure spin current (without net charge flow) by electric fields and/or temperature gradient has been an essential leap in the quest for low-power consumption electronics. The key issue of…
We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it…
Controlling the Mott transition through strain engineering is crucial for advancing the development and application of memristive and neuromorphic computing devices. Yet, Mott insulators are heterogeneous due to intrinsic phase boundaries…
We use spin-torque resonance to probe simultaneously and separately the dynamics of a magnetic domain wall and of magnetic domains in a nanostripe magnetic tunnel junction. Thanks to the large associated resistance variations we are able to…
Experimental observations suggest that nominally uncharged, as-grown domain walls in ferroelectric thin films can be conductive, yet comprehensive theoretical models to explain this behavior are lacking. Here, Landau theory is used to…
In the present work we shall address the issue of electrical conductivity in superconductors in the perspective of superconducting domain wall solutions in the realm of field theory. We take our set up made out of a dynamical complex scalar…
Interfacial ferroelectricity offers a promising platform for ultrafast, low-power memory devices. While previous studies have demonstrated the importance of domain wall in polarization switching, the coexistence of various domain wall types…
We characterize the transport properties of functionalized graphene nanoribbons using extensive first-principles calculations based on density functional theory (DFT) that encompass both monovalent and divalent ligands, hydrogenated defects…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
Mott metal-insulator transitions possess electronic, magnetic, and structural degrees of freedom promising next generation energy-efficient electronics. We report a previously unknown, hierarchically ordered state during a Mott transition…
We theoretically propose a polymer-based nano-device consisting of a single trans-polyacetylene (tPA) molecule capacitively coupled to external voltage gates. We model the integrated device using a Su-Schrieffer-Heeger (SSH)-like…
We present a theoretical study of heat transport in electrically insulating ferromagnetic wires containing a domain wall. In the regime of validity of continuum micromagnetism a domain wall is found to have no effect on the heat…
A fundamentally intriguing yet not well understood topic in the field of ferroelectrics is the collective excitation of domain walls (DWs), with potential applications to DW-based nanoelectronic and optoelectronic devices. Here we use…
Electronic and structural phenomena at the twin domain wall-surface junctions in the ferroelastic materials are analyzed. Carriers accumulation caused by the strain-induced band structure changes originated via the deformation potential…
We report on extensive domain wall motion in ferroelectric nanocapacitor arrays investigated by piezoresponse force microscopy. Under a much longer or higher bias voltage pulse, compared to typical switching pulse conditions, domain walls…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to…
Recently, electrically conducting heterointerfaces between dissimilar band-insulators (such as lanthanum aluminate and strontium titanate) have attracted considerable research interest. Charge transport has been thoroughly explored and…