Related papers: A gate-programmable van der Waals metal-ferroelect…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
Recent discovery of emergent magnetism in van der Waals magnetic materials (vdWMM) has broadened the material space for developing spintronic devices for energy-efficient computation. While there has been appreciable progress in vdWMM…
The discovery of local-moment magnetism in van der Waals (vdW) semiconductors down to the single-layer limit has led to a paradigm shift in the understanding of two-dimensional (2D) magnets and unleashed their potential for applications in…
As a promising alternative to the Von Neumann architecture, in-memory computing holds the promise of delivering high computing capacity while consuming low power. Content addressable memory (CAM) can implement pattern matching and distance…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
It has been long hoped that the realization of long-range ferromagnetic order in two-dimensional (2D) van der Waals (vdW) crystals, combined with their rich electronic and optical properties, would open up new possibilities for magnetic,…
Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure…
Low-dimensional multiferroic materials hold great promises in miniaturized device applications such as nanoscale transducers, actuators, sensors, photovoltaics, and nonvolatile memories. Here, using first-principles theory we predict that…
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway towards the elimination of external magnetic fields from spintronic devices. A further step is the integration…
Non-volatile memory devices have been limited to flash architectures that are complex devices. Here, we present a unique photomemory effect in MoS$_2$ transistors. The photomemory is based on a photodoping effect - a controlled way of…
I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…
Electrical control of magnetism in a two-dimensional (2D) semiconductor is of great interest for emerging nanoscale low-dissipation spintronic devices. Here, we propose a general approach of tuning magnetic coupling and anisotropy of a van…
Magnetic van der Waals (vdW) materials, including ferromagnets (FM) and antiferromagnets (AFM), have given access to the investigation of magnetism in two-dimensional (2D) limit and attracted broad interests recently. However, most of them…
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…
Ferroelectricity in van der Waals (vdW) layered material has attracted a great deal of interest recently. CuInP$_2$S$_6$ (CIPS), the only vdW layered material whose ferroelectricity in the bulk was demonstrated by direct polarization…
The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectricity provides a promising platform for this challenge: the…
Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…
Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, {\alpha}-In$_{2}$Se$_{3}$ has drawn particular attention…
Owing to the outstanding properties provided by nontrivial band topology, topological phases of matter are considered as a promising platform towards low-dissipation electronics, efficient spin-charge conversion, and topological quantum…
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…