Related papers: A novel concept for a fully digital particle detec…

CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is…

We have developed a silicon pixel detector to enhance the physics capabilities of the PHENIX experiment. This detector, consisting of two layers of sensors, will be installed around the beam pipe at the collision point and covers a…

Within the ATTRACT FASTPIX project, a monolithic pixel sensor demonstrator chip has been developed in a modified 180 nm CMOS imaging process technology, targeting sub-nanosecond timing precision for single ionising particles. It features a…

In beam test experiments have been carried out for particle identification using digital pulse shape analysis in a 500~$\mu$m thick Neutron Transmutation Doped (nTD) silicon detector with an indigenously developed FPGA based 12 bit…

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point,…

Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this…

Multi-pixel fast silicon detectors represent the enabling technology for the next generation of space-borne experiments devoted to high-resolution spectral-timing studies of low-flux compact cosmic sources. Several imaging detectors based…

Characteristics improvement of photon/plasmon detectors have been the subject of several investigations in the area of plasmonic integrated circuits. Among different suggestions, Silicon-based Metal-Semiconductor-Metal (MSM) waveguides are…

Single-atom quantum sensors offer high spatial resolution and high sensitivity to electric and magnetic fields. Among them, trapped ions offer exceptional performance in sensing electric fields, which has been used in particular to probe…

Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain…

Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing technologies. The proposal to use nuclear and electronic spins of…

Silicon sensors are the go-to technology for high-precision sensors in particle physics. But only recently low-noise silicon sensors with internal amplification became available. The so-called Low Gain Avalanche Detector (LGAD) sensors have…

The High Luminosity LHC (HL-LHC) upgrade requires the planned Inner Tracker (ITk) of the ATLAS detector to tolerate extremely high radiation doses. Specifically, the innermost parts of the pixel system will have to withstand radiation…

Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk…

For the last 50 years, superconducting detectors have offered exceptional sensitivity and speed for detecting faint electromagnetic signals in a wide range of applications. These detectors operate at very low temperatures and generate a…

Particle sensing in optical tweezers systems provides information on the position, velocity and force of the specimen particles. The conventional quadrant detection scheme is applied ubiquitously in optical tweezers experiments to quantify…

DEPFET pixel detectors are unique devices in terms of energy and spatial resolution because very low noise (ENC = 2.2e at room temperature) operation can be obtained by implementing the amplifying transistor in the pixel cell itself. Full…

This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation.…

Plasmonic sensing has been in the spotlight for decades, the concept and applications of which have been generalized to spoof surface plasmons (SSPs) in the microwave band. Here, we report a compact and wireless sensor within a printed…

Particle beams focused to micrometer-sized spots play a crucial role in forefront research using low-energy positrons. Their expedient and wide application, however, requires highly-resolved, fast beam diagnostics. We have developed two…