Related papers: Temperature mapping of stacked silicon dies from x…
We describe the design, operation, and first results of a photometric calibration project, called DICE (Direct Illumination Calibration Experiment), aiming at achieving precise instrumental calibration of optical telescopes. The heart of…
The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in the dark current. The power dissipated, if not properly cooled, heats the SiPM, whose performance parameters depend on temperature. Heating…
In this paper we demonstrate that the weak temperature dependence of structure factor of supercooled liquids, a defining feature of the glass transition, is a consequence of the averaging of the scattering intensity either due to the use of…
Silicon's bandgap inherently restricts its photodetection to wavelengths below 1100 nm, necessitating the integration of costly III-V semiconductors for short-wave infrared applications. Hyperdoping silicon beyond the solid solubility limit…
We demonstrate the capabilities of a high temperature measurement set-up recently developed at our institute. It is dedicated to the characterization of semiconductor devices and test structures in the temperature range from room…
Recently, detailed calculations of the excitonic insulator phase model adapted to the case of 1\textit{T}-TiSe$_2$ have been presented. Through the spectral function theoretical photoemission intensity maps can be generated which are in…
Results from a large sample of hydrodynamical/N-body simulations of galaxy clusters in a LCDM cosmology are used to simulate cluster X-ray observations as expected from Chandra observations. The physical modeling of the gas includes…
Inelastic light scattering spectra of Bi_2Se_3 and Sb_2Te_3 single crystals have been measured over the temperature range from 5 K to 300 K. The temperature dependence of dominant A^{2}_{1g} phonons shows similar behavior in both materials.…
We present a method for in situ temperature measurement of superconducting quantum circuits, by using the first three levels of a transmon device to which we apply a sequence of $\pi$ gates. Our approach employs projective dispersive…
Laser excitation in silicon from femto- to pico-second time scales is studied. We assume the Three-Temperature Model (3TM) which describes the dynamics of the distinct quasi-temperatures for electrons, holes, and lattice. Numerical results…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
Very high precision measurements of the electron Lande g-factor in GaAs are presented using spin-quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. In colligation with available data for the…
We demonstrate a high-accuracy distributed fiber-optic temperature sensor using superconducting nanowire single-photon detectors and single-photon counting techniques. Our demonstration uses inexpensive single-mode fiber at standard…
The value of the scaling parameter $E_{\text{eff}}$ of the temperature dependence for current generated in silicon bulk is investigated for highly irradiated devices. Measurements of devices irradiated to fluences above $1 \times 10^{15}…
Several past studies have described how absorption spectroscopy can be used to determine spatial temperature variations along the optical path by measuring the unique, nonlinear response to temperature of many molecular absorption…
Understanding temperature-dependent hardness of covalent materials is not only of fundamental scientific interest, but also of crucial importance for technical applications. In this work, a temperature-dependent hardness formula for…
Accurate on-chip temperature sensing is critical for the optimal performance of modern CMOS integrated circuits (ICs), to understand and monitor localized heating around the chip during operation. The development of quantum computers has…
Excellent jet energy measurement is important at the International Linear Collider (ILC) because most of interesting physics processes decay into multi-jet final states. We employ a particle flow method to reconstruct particles, hence…
All theoretical models (Heisenberg, Ising etc.) assume a negligible role for thermal vibrations in alloy and magnetic phase transitions. Analysis of diffraction data conclusively proves that this assumption is incorrect. A simple criterion…
In this paper we study the thermal effective behaviour for 3D multiphase composite material consisting of three isotropic phases which are the matrix, the inclusions and the coating media. For this purpose we use an accelerated FFT-based…