Related papers: Temperature mapping of stacked silicon dies from x…
Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…
Using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, we have measured the absolute refractive index of five specimens taken from a very large boule of Corning 7980 fused silica from…
Silicon and germanium are perhaps the two most well-understood semiconductor materials in the context of solid state device technologies and more recently micromachining and nanotechnology. Meanwhile, these two materials are also important…
The controversy regarding the precise nature of the high-temperature phase of 1T-TiSe2 lasts for decades. It has intensified in recent times when new evidence for the excitonic origin of the low-temperature charge-density wave state started…
By studying the temperature-dependent behavior of electron thermal conductivity (k) in a 3.2 nm-thin film, we quantify the extremely confined defect-electron scattering and reveal the intrinsic phonon-electron scattering that is shared by…
We present suspended heater structures fabricated in a standard C- and O-band silicon (Si) photonics platform that can achieve sufficiently high local temperatures to induce effective refractive index trimming of Si and silicon nitride…
At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to…
Based on simplified one-dimensional steady-state analysis of thermoelectric phenomena and on analogies between thermal and electrical domains, we propose both lumped and distributed parameter electrical models for thermoelectric devices.…
We use spectrally dispersed near-IR interferometry data to constrain the temperature profiles of sub-AU-sized regions of 11 Herbig Ae/Be sources. We find that a single-temperature ring does not reproduce the data well. Rather, models…
In the framework of swift heavy ion - matter interaction, the thermal spike has proved its worth since nearly two decades. This paper deals with the necessary refinement of the computation due to the kind of materials involved i.e.…
Structural system identification in the presence of thermal loads is challenging, as unmeasured or poorly modeled thermal effects can mask or mimic damage, leading to unreliable conclusions. This work presents an optimization-driven,…
We have studied the temperature dependence of resistivity, $\rho$, for a two-dimensional electron system in silicon at low electron densities, $n_s\sim10^{11}$ cm$^{-2}$, near the metal/insulator transition. The resistivity was empirically…
Thermal behavior has become a first-order constraint in advanced 2.5D/3D integrated circuits (ICs) and heterogeneous packages. As power densities rise and multiple active dies are vertically integrated, heat removal paths become…
A simple means of detecting and spatially mapping volatile and nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced and its application demonstrated. The technique is based on thermal discolouration of a…
We propose a method for measuring the temperature of strongly correlated phases of ultracold atom gases confined in spin-dependent optical lattices. In this technique, a small number of "impurity" atoms--trapped in a state that does not…
We have investigated the temperature dependence of the crystal structure of quasi-one-dimensional monoclinic BaIrO$_3$ using X-ray diffraction. Diffraction patterns were measured across a temperature range from 13 K to 300 K, with 5-degree…
It is known that 3D-ICs suffer from hot spot temperatures that can reach thousands of degrees, if they are not cooled to reasonable operating temperatures. The problem of hot spots is not limited to the high temperatures of the IC; thermal…
We describe an optical method to directly measure position-dependent thermal diffusivity of reflective single crystal samples across a broad range of temperatures for condensed matter physics research. Two laser beams are used, one as a…
Thermal qualification of the die attach of semiconductor devices is a very important element in the device characterization as the temperature of the chip is strongly affected by the quality of the die attach. Voids or delaminations in this…
A novel, to the best of our knowledge, ultralow-temperature luminescence thermometry strategy is proposed, based on a measurement of relative intensities of hyperfine components in the spectra of Ho$^{3+}$ ions doped into a crystal. A…