Related papers: Large inverted band-gap in strained three-layer In…

The magnetotransport of two dimensional holes in a GaAs/AlGaAs heterostructure is studied experimentally and theoretically. Spin-orbit splitting of the heavy hole band is manifested at high carrier densities in two Shubnikov-de Haas…

Quantum Spin Hall (QSH) insulators possess distinct helical in-gap states, enabling their edge states to act as one-dimensional conducting channels when backscattering is prohibited by time-reversal symmetry. However, it remains challenging…

We study radiative linewidth of exciton resonance in shallow In$_x$Ga$_{1-x}$As/GaAs single quantum wells as a function of indium concentration in the range $x=0.02...0.10$ and well thickness in the range $L_Z=1...30$ nm using the method of…

We investigate the electronic and transport properties of topological and trivial InAs$_{1-x}$Bi$_x$ quantum dots (QDs). By considering the rapid band gap change within valence band anticrossing theory for InAs$_{1-x}$Bi$_x$, we predicted…

After establishing the fundamental understanding and the high throughput topological characterization of nearly all inorganic three-dimensional materials, the general interest and the demand of functional applications drive the research of…

We present a comparison of the band alignment of the Ga1-xInxNyAs1-y active layers on GaAs and InP substrates in the case of conventionally strained and strained-compensated quantum wells. Our calculated results present that the band…

We report a direct observation of temperature-induced topological phase transition between trivial and topological insulator in HgTe quantum well. By using a gated Hall bar device, we measure and represent Landau levels in fan charts at…

InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions. In two-dimensional systems, thin barriers are needed to allow strong…

The nature of a metal-insulator transition tuned by external gates in quantum Hall (QH) systems with point constrictions, as reported in recent experiments of Roddaro et al [1], is examined. We attribute this phenomenon to a splitting of…

A novel topological insulator with tunable edge states, called quantum spin-quantum anomalous Hall (QSQAH) insulator, is predicted in a heterostructure of a hydrogenated Sb (SbH) monolayer on a LaFeO3 substrate by using ab initio methods.…

We report the studies of high-quality HgTe/(Cd,Hg)Te quantum wells (QWs) with a width close to the critical one $d_c$, corresponding to the topological phase transition and graphene like band structure in view of their applications for…

We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing…

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…

By means of first-principles calculations, we predict a new 2D QSH insulator in the porous allotrope of Bismuth monolayer, bismuthylene, its dynamics stability being confirmed by phonon spectrum and molecular dynamics simulations. The…

Quantum Anomalous Hall (QAH) state in six quintuple layer Cr$_{0.1}$(Bi$_{0.2}$Sb$_{0.8}$)$_{1.9}$Te$_3$ thin films were studied through scanning tunneling spectroscopy (STS) and electrical transport measurements. While the surface state is…

We proposed that the simultaneous presence of both Rashba and band inversion can lead to a Rashba-like spin-splitting formed by two bands with the same in-plane helical spin texture. Because of this unconventional spin texture, the…

We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical…

Slow magnetooscilations of the conductivity are observed in a 75 nm wide quantum well at heating of the two-dimensional electrons by a high-intensity surface acoustic wave. These magnetooscillations are caused by intersubband elastic…

Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of…

In this work, we predict the emergence of a quantum spin Hall insulator (QSHI) in conventional semiconductors, specifically InAs quantum wells, driven by a built-in polarization field. We propose QSHI InAs quantum wells as a platform to…