Related papers: Hybrid Molecular Beam Epitaxy of Ge-based Oxides
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in…
Germanium thin films are an excellent candidate for use as a low-loss dielectric in superconducting microwave resonators, a low-loss inter-layer metal wiring dielectric, and passivation layers in microwave and Josephson junction devices. In…
The stoichiometric "111" iron-based superconductor, LiFeAs, has attacted great research interest in recent years. For the first time, we have successfully grown LiFeAs thin film by molecular beam epitaxy (MBE) on SrTiO3(001) substrate, and…
Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…
The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3,…
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on…
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films…
This study presents a demonstration of the surface morphology behavior of gallium antimonide (GaSb) layers deposited on gallium arsenide (GaAs) (100) substrates using three different methods: metamorphic, interfacial misfit (IMF) matrix,…
Epitaxial Fe film has been grown on ion beam sputtered MgO(001) substrate by electron beam evaporation. Reflection high energy electron diffraction (RHEED) and transport measurements (TM) were performed simultaneously during the growth of…
We report the growth of epitaxial LaInO3 on DyScO3(110) substrates by adsorption-controlled plasma-assisted molecular beam epitaxy (PA-MBE). The adsorption-controlled growth was monitored using line-of-sight quadrupole mass spectrometry. In…
The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2…
High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered…
Binary rutile oxides of 5d metals such as IrO2, stand out as a paradox due to limited experimental studies despite the rich predicted quantum phenomena. Here, we investigate the electrical transport properties of IrO2 by engineering…
We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has been varied from x = 0 to 0.66, confirmed by Rutherford…
Using a gold (111) surface as a substrate we have grown in situ by molecular beam epitaxy an atom-thin, ordered, two-dimensional multi-phase film. Its growth bears strong similarity with the formation of silicene layers on silver (111)…
The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ reflection high-energy electron diffraction (RHEED) and…
Beta-phase gallium oxide (beta-Ga2O3) is prone to the spontaneous formation of donor defects but poses a formidable challenge in achieving high-quality p-type doping, mainly due to its exceptionally low valence band maximum (VBM). In this…
Three-dimensional topological insulators (3D-TIs) are a new generation of materials with insulating bulk and exotic metallic surface states that facilitate a wide variety of ground-breaking applications. However, utilization of the surface…
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking…