The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically-resolved electron energy loss spectroscopy mapping shows a uniform and random distribution of all B-site cations. The ability to stabilize perovskites with this level of configurational disorder offers new possibilities for designing materials from a much broader combinatorial cation pallet while providing a fresh avenue for fundamental studies in strongly correlated quantum materials where local disorder can play a critical role in determining macroscopic properties.
@article{arxiv.1806.11209,
title = {Single Crystal High Entropy Perovskite Oxide Epitaxial Films},
author = {Yogesh Sharma and Brianna L. Musico and Xiang Gao and Chengyun Hua and Andrew F. May and Andreas Herklotz and Ankur Rastogi and David Mandrus and Jiaqiang Yan and Ho Nyung Lee and Matthew F. Chisholm and Veerle Keppens and T. Zac Ward},
journal= {arXiv preprint arXiv:1806.11209},
year = {2018}
}