Related papers: A Magnetoelectric Memory Device Based on Pseudo-Ma…
Magnetoelectric (ME) effect refers to the coupling between electric and magnetic fields in a medium resulting in electric polarization induced by magnetic fields and magnetization induced by electric fields. The linear ME effect in certain…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for…
Magnetoelectric coupling is vital for exploring fundamental science and driving the development of high-density memory and energy-efficient spintronic devices. Altermagnets, which merge the benefits of ferromagnets and antiferromagnets,…
We propose an improved scheme for low-power writing of binary bits in non-volatile (multiferroic) magnetic memory with electrically generated mechanical stress. Compared to an earlier idea [Tiercelin, et al., J. Appl. Phys., 109, 07D726…
Investigation of the magnetic switching and magnetoresistive behaviour of nanoscale spin valve elements (SVs) of varying physical parameters such as shape, element size, dimensional aspect ratio, and array size is of vital importance for…
We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanically coupled to…
Ferromagnetic resonance (FMR) is a fundamental technique for probing magnetization dynamics in spintronic and magnetic materials. However, conventional FMR measurements rely on broadband vector network analyzers (VNAs), whose high cost…
We propose a design for the magnetic memory cell which allows an efficient storage, recording, and readout of information on the basis of thin film ferromagnetic nanorings. The information bit is represented by the polarity of a stable…
Antiferromagnets (AFMs) with zero net magnetization are proposed as active elements in future spintronic devices. Depending on the critical thickness of the AFM thin films and the measurement temperature, bimetallic Mn-based alloys and…
Multiferroics are promising for sensor and memory applications, but despite all efforts invested in their research no single-phase material displaying both ferroelectricity and large magnetization at room-temperature has hitherto been…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
This work proposes CoMET, a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure - a ferromagnet (FM) with in-plane magnetic…
Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET…
The ferroelectric material is an important platform to realize non-volatile memories. So far, existing ferroelectric memory devices utilize out-of-plane polarization in ferroelectric thin films. In this paper, we propose a new type of…
Magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on…
Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of altermagnets, which unify the advantages of ferromagnets and…
The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify…
A set of equations describing the motion of a free magnetic nanoparticle in an external magnetic field in a vacuum, or in a medium with negligibly small friction forces is postulated. The conservation of the total particle momentum, i.e.…
The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…