Related papers: A Magnetoelectric Memory Device Based on Pseudo-Ma…
Superparamagnetism in nanoscale magnetic layers is a critical property for a wide range of spintronic-based sensor and computing applications. While conventional magnetization measurements can detect superparamagnetic signatures, they often…
Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of…
Bistable nanomagnets store a binary bit of information. Exchange coupled nanomagnets can increase the thermal stability at low dimensions. Here we show that the antiferromagnetically (AFM) coupled nanomagnets can be highly stable at low…
In this work, we consider a type of magnetic memory where information is encoded into the mutual arrangements of magnets. The device is an active ring circuit comprising magnetic and electronic parts connected in series. The electric part…
Hafnium oxide (HfO2)-based ferroelectrics offer remarkable promise for memory and logic devices in view of their compatibility with traditional silicon CMOS technology, high switchable polarization, good endurance and thickness scalability.…
I present a review of both experimental and theoretical studies performed during the recent three years, which deal with the physical properties and possible applications of graphene placed on ferroelectric (organic or Pb(ZrxTi1-x)O3 (PZT)…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based…
This paper introduces a new approach for simulating magnetic properties of nanocomposites comprising magnetic particles embedded in a non-magnetic matrix, taking into account the 3D structure of the system in which particles' positions…
Tuneable capacitors are vital for adaptive and reconfigurable electronics, yet existing approaches require continuous bias or mechanical actuation. Here we demonstrate a voltage-programmable ferroelectric memcapacitor based on HfZrO that…
The inherent stochasticity in many nano-scale devices makes them prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic…
We propose a non-volatile memory element based on a lateral ferromagnetic Josephson junction with spin-orbit coupling and out-of-plane magnetization. The interplay between the latter and the intrinsic exchange field of the ferromagnet leads…
We have fabricated a variety of "PZT-PFW" (PbZr0.52Ti0.48O3)1-x(PbFe2/3W1/3O3)x [PZTFWx; 0.2 < x < 0.4] single-phase tetragonal ferroelectrics via chemical solution deposition (CSD) [polycrystalline] and pulsed laser deposition (PLD)…
Magnetic nanomaterials record information as fast as picoseconds in computer memories but retain it for millions of years in ancient rocks. This exceedingly broad range of times is covered by hopping over a potential energy barrier through…
The behavior of ferroelectricity at the nanoscale is the focus of increasing research activity because of intense interest in the fundamental nature of spontaneous order in condensed-matter systems and because of the many practical…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Magnetic domain memory (MDM) is the ability exhibited by certain magnetic materials to reproduce the exact same nanoscale magnetic domain pattern, even after it has been completely erased by an external magnetic field. In this chapter, we…
A new theory is developed for the magnetoelectric (ME) coupling in a symmetric 2-2 ME laminate having a representative piezoelectric crystal (PMN-PT) particularly with anisotropic piezoelectric properties. Considering the average field…