Related papers: Single photon emission and recombination dynamics …
Single-photon emitters are essential for enabling several emerging applications in quantum information technology, quantum sensing and quantum communication. Scalable photonic platforms capable of hosting intrinsic or directly embedded…
The electronic and optical properties of self-assembled InN/GaN quantum dots (QDs) are investigated by means of a tight-binding model combined with configuration interaction calculations. Tight-binding single particle wave functions are…
The surface of semiconductor nanostructures has a major impact on their electronic and optical properties. Disorder and defects in the surface layer typically cause degradation of charge carrier transport and radiative recombination…
An experimental observation on irreversible thermal quenching and antiquenching behavior is reported for photoluminescence (PL) of ZnS/CdS:Mn/ZnS quantum well quantum dots (QWQDs) prepared with a reverse micelle method. The dual-color…
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed,…
We theoretically study the polarization entanglement of photons generated by the biexciton cascade in a GaAs/InAs semiconductor quantum dot (QD), located in a nano cavity. A detailed analysis of the complex interplay between photon- and…
Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon…
Epitaxially grown quantum dots (QDs) are promising sources of non-classical states of light such as single photons and entangled photons. However, in order for them to be used as a resource for long-distance quantum communication,…
We analyze the potential of the $c$-plane InGaN/GaN quantum dots for polarization entangled photon emission by means of an atomistic many-body framework. Special attention is paid to the impact of random alloy fluctuations on the excitonic…
The prospect of realizing building blocks for long-distance quantum communication is a major driving force for the development of advanced nanophotonic devices. Significant progress has been achieved in this field with respect to the…
Triggered, indistinguishable, single photons play a central role in various quantum photonic implementations. Here, we realize a novel n$^+-$i$-$n$^{++}$ diode structure embedding semiconductor quantum dots: the gated device enables…
Fulfilling the potential of the colloidal semiconductor quantum dots (QDs) in electrically driven applications remains a challenge largely since operation of such devices involves charged QDs with drastically different photo-physical…
III-Nitride quantum dots have emerged as a new chip-scale system for quantum information science, which combines electrical and optical interfaces on a semiconductor chip that is compatible with non-cryogenic operating temperatures. Yet…
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks. Their suitability for…
We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a…
Colloidal quantum dots have garnered active research interest as quantum emitters due to their robust synthesis process and straightforward integration with nanophotonic platforms. However, obtaining indistinguishable photons from the…
The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots…
We present an ultra-compact source of maximally entangled on-demand photon pairs. Our results are based on coupling of single GaAs quantum dots that are embedded in monolithic micro-lenses to a single-mode fiber with directly attached to…
Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…
Quantum emitters in hexagonal boron nitride (hBN) have recently emerged as promising bright single photon sources. In this letter we investigate in details their optical properties at cryogenic temperatures. In particular, we perform…