Related papers: Single photon emission and recombination dynamics …
Quantum dots (QDs) based on III-nitride semiconductors are promising for single photon emission at non-cryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
We present a full configuration interaction study of the spontaneous recombination of neutral and singly charged excitons (trions) in semiconductor quantum dots, from weak to strong coupling regimes. We find that the enhancement of the…
We present time integrated and time resolved measurements on single In/As quantum dots (QD) emitting at 1300nm, at 10K, embedded in a planar microcavity. We clearly identify a standard spectroscopic signature from single QDs and compare the…
Single-photon sources are key building blocks in most of the emerging secure telecommunication and quantum information processing schemes. Semiconductor quantum dots (QD) have been proven to be the most prospective candidates. However,…
Room-temperature single-photon emission (SPE) resulting from a biexciton-exciton cascaded decay is demonstrated for the first time from chemically and photoelectrochemically etched site-controlled In0.14Ga0.86N quantum dots (QDs) embedded…
Room temperature single photon sources (SPS) are crucial for developing the next generation quantum technologies. Quantum dots (QDs), recently, have been reported as promising materials as SPS at room temperature. By optimizing the single…
In recent years, there has been a growing demand for room-temperature visible single-photon emission from InGaN nanowire-quantum-dots (NWQDs) due to its potential in developing quantum computing, sensing, and communication technologies.…
In the search for materials for quantum information science applications, colloidal semiconductor nanoplatelets (NPLs) have emerged as a highly promising new class of materials due to their interesting optical properties, such as narrow…
We report on photon coincidence measurement in a single GaAs self-assembled quantum dot (QD) using a pulsed excitation light source. At low excitation, when a neutral exciton line was present in the photoluminescence (PL) spectrum, we…
We discuss photo-luminescence characteristics of CdSe core/shell quantum dots at cryogenic temperatures using a hybrid system of a single quantum dot and an optical nanofiber. The key point is to control the emission species of quantum dot…
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report…
The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and…
We have demonstrated surface-plasmon induced change in spontaneous emission rate in the ultraviolet regime at ~ 375-380 nm, using AlN/GaN quantum dots (QD). Using time-resolved and continuous-wave photoluminescence measurements, the…
Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as…
Highly efficient anti-Stokes (AS) photoluminescence (PL) is observed from halide perovskite quantum dots (QDs) due to their strong electron-phonon interactions. The AS PL is particularly intriguing as it suggests the potential for…
Time-resolved photoluminescence (PL) and micro-PL imaging were used to study single CdS nanowires at 10 K. The low-temperature PL of all CdS nanowires exhibit spectral features near energies associated with free and bound exciton…
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…
Single photon sources (SPS), especially those based on solid state quantum emitters, are key elements in future quantum technologies. What is required is the development of broadband, high quantum efficiency, room temperature SPS which can…
We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and…