Related papers: CMOS pixel sensors optimized for large ionizing dy…
High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nm HV-CMOS process have been proposed to realize thin, fast and highly integrated pixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18 process,…
This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…
A parametric simulation tool for pixel sensors is presented. A realistic pixel response is simulated purely based on measurement input, without requiring detailed knowledge of the underlying manufacturing process. As such, it provides an…
Transition Edge Sensor (TES) bolometers are a well-established technology with a strong track record in experimental cosmology, making them ideal for current and future radio astronomy instruments. The Tomographic Ionized-carbon Mapping…
The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper…
The upgraded Inner Tracking System (ITS2) of the ALICE experiment at the CERN Large Hadron Collider is based on Monolithic Active Pixel Sensors (MAPS). With a sensitive area of about 10 $m^2$ and 12.5 billion pixels, ITS2 represents the…
An improved SOI-MAPS (Silicon On Insulator Monolithic Active Pixel Sensor) for ionizing radiation based on thick-film High Voltage SOI technology (HV-SOI) has been developed. Similar to existing Fully Depleted SOI-based (FD-SOI) MAPS, a…
A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The…
The ALICE Inner Tracking System upgrade (ITS3) will employ stitched, wafer-scale Monolithic Active Pixel Sensors (MAPS) for the first time in high-energy physics, achieving a material budget of only 0.09$\,$%$\,$X$\mathrm{_{0}}$ per layer.…
In-vacuum active pixel detectors enable high sensitivity, highly parallel time- and space-resolved detection of ions from complex surfaces. For the first time, a Timepix detector assembly was combined with a Secondary Ion Mass Spectrometer…
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average…
The Pixel-Imaging Mass Spectrometry (PImMS) camera allows for 3D charged particle imaging measurements, in which the particle time-of-flight is recorded along with $(x,y)$ position. Coupling the PImMS camera to an ultrafast pump-probe…
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in…
Recently, we reported an ion trap experiment with an integrated time-of-flight mass spectrometer (TOFMS) [Phys. Rev. Appl. 2, 034013 (2014)] focussing on the improvement of mass resolution and detection limit due to sample preparation at…
Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…
AstroPix is a high-voltage CMOS (HV-CMOS) monolithic active pixel sensor (MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging…
The Compressed Baryonic Matter (CBM) experiment at the future Facility for Antiproton and Ion Research (FAIR) is a heavy-ion experiment designed to study nuclear matter at the highest baryonic density. For high-statistics measurements of…
Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…
CLICTD is a monolithic silicon pixel sensor fabricated in a modified 180 nm CMOS imaging process with a small collection electrode design and a high-resistivity epitaxial layer. It features an innovative sub-pixel segmentation scheme and is…
The ATLASpix high-voltage monolithic active pixel sensor (HV-MAPS) was designed as a technology demonstrator for the ATLAS ITk Upgrade and the CLIC tracking detector. In this contribution new results from laboratory-based energy calibration…