Related papers: Topmetal-M: a novel pixel sensor for compact track…

In this paper, we study how pixel size influences energy resolution for a proposed pixelated detector---a high sensitivity, low cost, and real-time radon monitor based on \textit{Topmetal-${II}^-$} time projection chamber (TPC). Using…

We present a novel single-photon detector based on a vacuum tube incorporating a photocathode, a microchannel plate (MCP), and a Timepix4 CMOS ASIC functioning as a pixelated anode. Designed to handle photon rates up to 1 billion per second…

This paper presents the design and results of detailed tests of a CMOS active pixel chip for charged particle detection with in-pixel charge storage for correlated double sampling and readout in rolling shutter mode at frequencies up to 25…

INTPIX4NA is an integration-type silicon-on-insulator pixel detector. This detector has a 14.1 x 8.7 mm^2 sensitive area, 425,984 (832 column x 512 row matrix) pixels and the pixel size is 17 x 17 um^2. This detector was developed for…

Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments.…

This study investigates the charging-up effect on the Topmetal-II- chip in Gas Micro-Pixel Detectors(GMPD). It is found that this effect differs from the charging-up typically observed in gas detector multiplier devices and increases the…

MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The sensing element is a deep n-well/p-substrate diode without…

Micro-TPC, a time projection chamber(TPC) with micro pixel chamber($\mu$-PIC) readout was developed for the detection of the three-dimensional fine(sub-m illimeter) tracks of charged particles. We developed a two-dimensional position…

The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of high resolution, low material, fast readout and low power. The Monolithic Active Pixel Sensor (MAPS) technology has been…

The Super Tau-Charm Facility (STCF) is a proposed $e^+e^-$ collider with a peak luminosity 100 times higher than that of the present tau-charm factory. The inner tracker (ITK) of STCF should feature a low material budget and high readout…

Active Pixel Sensor (APS) technology has shown promise for next-generation vertex detectors. This paper discusses the design and testing of two generations of APS chips. Both are arrays of 128 by 128 pixels, each 20 by 20 micro-m. Each…

Multichip modules (MCM) with 4 single photon counting MPEC 2.3 chips bump bonded to 1.3 cm x 1.3 cm large CdTe and Si semiconductor sensors as well as to single chip pixel detectors have been successfully built and operated. The MPEC 2.3…

Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high…

Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure…

During the Long Shutdown 2 of the LHC in 2018/2019, the ALICE experiment plans the installation of a novel Inner Tracking System. It will replace the current six layer detector system with a seven layer detector using Monolithic Active…

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already…

We present the first physical realization of in-pixel signal processing with integrated AI-based data filtering for particle tracking detectors. Building on prior work that demonstrated a physics-motivated edge-AI algorithm suitable for…

This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $\mu$m and a thin…

We developed a beam telescope system comprising five layers of 300-$\mu$m-thick INTPIX4NA monolithic pixel sensors with each pixel size of 17 $\mu$m square. The sensors were fabricated using silicon-on-insulator (SOI) technology. The…

First measurements are presented from a newly commissioned two-photon absorption (TPA) setup at Nikhef. The characterisation of the various components of the system is discussed. Two planar silicon sensors, one being electron collecting and…