Related papers: Algorithm for constructing customized quantized re…
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular…
Due to the lack of simulation tools that take into account the actual geometry of complicated quantum Hall samples there are lots of experiments that are not yet fully understood. Already some years ago R. G. Mani recorded a shift of the…
We theoretically predict a giant quantized Goos-H\"{a}nchen (GH) effect on the surface of graphene in quantum Hall regime. The giant quantized GH effect manifests itself as an angular shift whose quantized step reaches the order of mrad for…
We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…
We have fabricated graphene devices with a top gate separated from the graphene layer by an air gap--a design which does not decrease the mobility of charge carriers under the gate. This gate is used to realise p-n-p structures where the…
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 micrometers long. Measurements as…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
It is theoretically possible to combine several Hall bars in arrays to define new quantum standards with perfectly quantized resistance values. We have thus, for the first time, developed and fabricated novel Quantum Hall Array Resistance…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…
Realizing graphene's promise as an atomically thin and tunable platform for fundamental studies and future applications in quantum transport requires the ability to electrostatically define the geometry of the structure and control the…
The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…
The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential…
We report the observation of the quantized Hall effect in suspended graphene probed with a two-terminal lead geometry. The failure of earlier Hall-bar measurements is discussed and attributed to the placement of voltage probes in mesoscopic…
The Hall resistance obtained in liquid gated Hall effect measurement of graphene demonstrates a higher sensitivity than the sheet resistance and the gate-source current for L-histidine of different concentrations in the pM range. This…
Graphene enables precise carrier-density control via gating, making it an ideal platform for studying electronic interactions. However, sample inhomogeneities often limit access to the low-density regimes where these interactions dominate.…
The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and…
Manipulating electron quantum 1D channels is an important element in the field of quantum information due to their ballistic and phase coherence properties. In GaAs and graphene based two dimensional gas systems, these edge channels have…
We present an analytical scaling theory for localization in a two-dimensional hierarchical network model that is designed to represent phase-coherent electron transport in the quantum-Hall regime. Scaling expressions for both the…
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…
We have analyzed the breakdown of the quantum Hall effect in 1 micrometer wide Hall devices fabricated from an exfoliated monolayer graphene transferred on SiOx. We have observed that the deviation of the Hall resistance from its quantized…