Related papers: Measurement and simulation of charge diffusion in …
A graphene-optimized silicon carbide PIN detector was fabricated and its radiation tolerance under X-ray irradiation of 160 keV was evaluated. Its electrical properties, charge collection performance and time resolution of beta-particles…
A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…
We present characterization results and performance of a prototype Multiple-Amplifier Sensing (MAS) silicon charge-coupled device (CCD) sensor with 16 channels potentially suitable for faint object astronomical spectroscopy and low-signal,…
A charge injection technique is applied to the X-ray CCD camera, XIS (X-ray Imaging Spectrometer) onboard Suzaku. The charge transfer inefficiency (CTI) in each CCD column (vertical transfer channel) is measured by the injection of charge…
A CMOS pixel sensor, named Supix-1, is developed for a pixelated silicon tracker for the Circular Electron-Positron Collider (CEPC) project. The sensor, consisted of nine sectors varying in pixel sizes, diode sizes and geometries, is…
We present an X-ray characterization of a fully depleted, 725 $\mu$m thick p-channel SiSeRO CCD. Measurements with a $^{55}$Fe source yield an energy resolution of $54 \pm 0.9$ eV ($14.6 \pm 0.25 e^{-}$) at 5.9 keV for single-pixel events,…
We are currently investigating the spatial resolution of highly pixelated Cadmium Zinc Telluride (CZT) detector for imaging applications. A 20 mm {\times} 20 mm {\times} 5 mm CZT substrate was fabricated with 600 {\mu}m pitch pixels (500…
During the scheduled high luminosity upgrade of LHC, the world's largest particle physics accelerator at CERN, the position sensitive silicon detectors installed in the vertex and tracking part of the CMS experiment will face more intense…
We study the properties of the diffuse X-ray background by using the results of a cosmological hydrodynamical simulation of the concordance LambdaCDM model. The simulation follows gravitational and gas dynamics and includes a treatment of…
Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the…
X-ray hybrid CMOS detectors (HCDs) are a promising candidate for future x-ray missions requiring high throughput and fine angular resolution along with large field-of-view, such as the high-definition x-ray imager (HDXI) instrument on the…
We propose a new strip configuration for CdTe X-ray detectors, named "Wide-gap CdTe strip detector", in which the gap between adjacent strips is much wider than the width of each strip. It has been known that the observed energies of an…
We have been developing silicon-on-insulator (SOI) pixel detectors with a pinned depleted diode (PDD) structure, named "XRPIX", for X-ray astronomy. In our previous study, we successfully optimized the design of the PDD structure, achieving…
In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on charge sharing and position determination. The simulation implements a model of radiation damage by including two…
Thick back-illuminated deep-depletion CCDs have superior quantum efficiency over previous generations of thinned and traditional thick CCDs. As a result, they are being used for wide-field imaging cameras in several major projects. We use…
When an X-ray photon lands into a pixel (event pixel), the primary charge is mainly collected into the event pixel. If the X-ray landing position is sufficiently close to the pixel boundary, the primary charge spills over to the adjacent…
The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules…
This paper presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 keV and 100 keV electrons. The point spread function is measured to be (13.0+/- 1.7) microns at 100 keV and…
Several charge integrating CMOS pixel front-ends utilizing charge removal techniques have been fabricated to extend dynamic range for x-ray diffraction applications at synchrotron sources and x-ray free electron lasers (XFELs). The pixels…
We are developing large TES arrays in combination with FDM readout for the next generation of X-ray space observatories. For operation under AC-bias, the TESs have to be carefully designed and optimized. In particular, the use of high…