Related papers: Charge-noise induced dephasing in silicon hole-spi…
Controlling electron spins in double quantum dots allows individual electrons to be trapped and manipulated for next-generation solid-state qubit devices. In this paper, the study analyzes spin relaxation due to deformation potentials of…
Hole spins in silicon or germanium quantum dots have emerged as a compelling solid-state platform for scalable quantum processors. Besides relying on well-established manufacturing technologies, hole-spin qubits feature fast,…
The dephasing time of spin-orbit qubits is limited by the coupling with electrical and charge noise. However, there may exist "dephasing sweet spots" where the qubit decouples (to first order) from the noise so that the dephasing time…
We develop a theory for the spin-echo dynamics of a heavy hole in a quantum dot, accounting for both hyperfine- and electric-field-induced fluctuations. We show that a moderate applied magnetic field can drive this system to a…
We investigate relaxation and dephasing of an electron spin confined in a semiconductor quantum dot and subject to spin-orbit coupling. Even in vanishing magnetic field, B = 0, slow noise coupling to the electron's orbital degree of freedom…
Coherence of spins of electrons confined in III-V quantum dots is strongly affected by their hyperfine interaction with the nuclei. In this paper an introduction to this subject will be given. Some theoretical approaches to the problem will…
Hole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it…
We study spin-orbit mediated relaxation and dephasing of electron spins in quantum dots. We show that higher order contributions provide a relaxation mechanism that dominates for low magnetic fields and is of geometrical origin. In the…
Characterizing charge noise is of prime importance to the semiconductor spin qubit community. We analyze the echo amplitude data from a recent experiment [Yoneda et al., Nat. Nanotechnol. 13, 102 (2018)] and note that the data shows small…
Charge noise is the main hurdle preventing high-fidelity operation, in particular that of two-qubit gates, of semiconductor-quantum-dot-based spin qubits. While certain sweet spots where charge noise is substantially suppressed have been…
Quantum dots are arguably the best interface between matter spin qubits and flying photonic qubits. Using quantum dot devices to produce joint spin-photonic states requires the electronic spin qubits to be stored for extended times.…
The nuclear spin of a phosphorus atom in silicon has been used as a quantum bit in various quantum-information experiments. It has been proposed that this nuclear-spin qubit can be efficiently controlled by an ac electric field, when…
Dephasing of a charge qubit is usually credited to charge noise in the environment. Here we show that charge noise may not be the limiting factor for the qubit coherence. To this end, we study coherence properties of a crystal-phase defined…
Decoherence and relaxation of solid-state defect qutrits near a crystal surface, where they are commonly used as quantum sensors, originates from charge and magnetic field noise. A complete theory requires a formalism for decoherence and…
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and…
We have studied the dephasing of a superconducting flux-qubit coupled to a DC-SQUID based oscillator. By varying the bias conditions of both circuits we were able to tune their effective coupling strength. This allowed us to measure the…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
Although the Gaussian-noise assumption is widely adopted in the study of qubit decoherence, non-Gaussian noise sources, especially the strong discrete fluctuators, have been detected in many qubits. It remains an important task to further…
Exchange coupled {\it spin} qubits in semiconductor nanostructures are shown to be vulnerable to dephasing caused by {\it charge noise} invariably present in the semiconductor environment. This decoherence of exchange gate by environmental…