Related papers: Charge-noise induced dephasing in silicon hole-spi…
We study the dephasing of two-electron states in a single quantum dot in both GaAs and Si. We investigate dephasing induced by electron-phonon coupling and by charge noise analytically for pure orbital excitations in GaAs and Si, as well as…
The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a…
Molecular spins offer promise in emerging quantum technologies such as quantum sensing and computing. At low temperatures, nuclear spin-spin interactions affect electron spin coherence lifetimes through pure dephasing. Nuclear-spin noise…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
We use Ramsey interferometry to study spin dynamics in the strongly interacting regime of spin-orbit-coupled quantum gases in one-dimensional optical lattices. We observe an intrinsic many-body dephasing mechanism immune to spin-echo in…
For many implementations of quantum computing, 1/f and other types of broad-spectrum noise are an important source of decoherence. An important step forward would be the ability to back out the characteristics of this noise from qubit…
Spin inertia measurements are a novel experimental tool to study long-time spin relaxation processes in semiconductor nanostructures. We develop a theory of the spin inertia effect for resident electrons and holes localized in quantum dots.…
An electron spin qubit in a silicon donor atom is a promising candidate for quantum information processing because of its long coherence time. To be sensed with a single-electron transistor, the donor atom is usually located near an…
Long coherence time and compatibility with semiconductor fabrication make spin qubits in silicon an attractive platform for quantum computing. In recent years, hole spin qubits are being developed as they have the advantages of weak…
We analyze decoherence of an electron in a double-dot due to the interaction with acoustic phonons. For large tunneling rates between the quantum dots, the main contribution to decoherence comes from the phonon emission relaxation…
Addressing and mitigating decoherence sources plays an essential role in the development of a scalable quantum computing system, which requires low gate errors to be consistently maintained throughout the circuit execution. While nuclear…
We address the experimentally relevant problem of robust mitigation of dephasing noise acting on a qubit. We first present an extension of a method for representing $1/\omega^{\alpha}$ noise developed by Kuopanportti et al. to the efficient…
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal…
We theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low temperature decoherence…
We theoretically study the interaction of a heavy hole with nuclear spins in a quasi-two-dimensional III-V semiconductor quantum dot and the resulting dephasing of heavy-hole spin states. It has frequently been stated in the literature that…
A novel spintronic nanodevice is proposed that is capable to manipulate the single heavy hole spin state in a coherent manner. It can act as a single quantum logic gate. The heavy hole spin transformations are realized by transporting the…
In quantum computation, quantum coherence must be maintained during gate operation. However, in physical implementations, various couplings with the environment are unavoidable and can lead to a dephasing of a quantum bit(qubit). The…
We advance spin noise spectroscopy to an ultrafast tool to resolve high frequency spin dynamics in semiconductors. The optical non-demolition experiment reveals the genuine origin of the inhomogeneous spin dephasing in n-doped GaAs wafers…
We theoretically study the dephasing of an Andreev spin qubit (ASQ) due to electric and magnetic noise. Using a tight-binding model, we calculate the Andreev states formed in a Josephson junction where the link is a semiconductor with…
We study the effect of a noisy environment on spin and charge transport in ballistic quantum wires with spin-orbit coupling (Rashba coupling). We find that the wire then acts as a ``dephasing diode'', inducing very different dephasing of…