Related papers: Designs for programmable quantum resistance standa…
We present a degenerate four-wave mixing experiment on a silicon nitride (SiN) waveguide covered with gated graphene. We observe strong dependencies on signal-pump detuning and Fermi energy, i.e. the optical nonlinearity is demonstrated to…
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where…
In this paper, we report on the controllable negative differential resistance (NDR) in a proposed planar graphene superlattice structure. High value of peak to valley ratio (PVR) is predicted. This is significant because of appearance of…
The metal-graphene contact resistance is a technological bottleneck for the realization of viable graphene based electronics. We report a useful model to find the gate tunable components of this resistance determined by the sequential…
Transport through potential barriers in graphene is investigated using a set of metallic gates capacitively coupled to graphene to modulate the potential landscape. When a gate-induced potential step is steep enough, disorder becomes less…
Confinement of electrons in graphene to make devices has proven to be a challenging task. Electrostatic methods fail because of Klein tunneling, while etching into nanoribbons requires extreme control of edge terminations, and bottom-up…
We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto…
The coherence of quantum Hall (QH) edges play the deciding factor in demonstrating an electron interferometer, which has potential to realize a topological qubit. A Graphene p-n junction (PNJ) with co-propagating spin and valley polarized…
In this study, we conduct a first-principles analysis to explore the structural and electronic properties of curved biphenylene/graphene lateral junctions (BPN/G). We start our investigation focusing on the energetic stability of BPN/G by…
Graphene is an excellent material for Hall sensors due to its atomically thin structure, high carrier mobility and low carrier density. However, graphene devices need to be protected from the environment for reliable and durable performance…
Using atomistic simulations we investigate the thermodynamical properties of a single atomic layer of hexagonal boron nitride (h-BN). The thermal induced ripples, heat capacity, and thermal lattice expansion of large scale h-BN sheets are…
Light absorption in graphene causes a large change in electron temperature, due to low electronic heat capacity and weak electron phonon coupling [1-3], making it very attractive as a hot-electron bolometer material. Unfortunately, the weak…
A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to…
Since the advent of graphene, a variety of studies have been performed to elucidate its fundamental physics, or to explore its practical applications. Gate-tunable resistance is one of the most important properties of graphene and has been…
We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…
Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is…
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The primary challenge in modulating this gap has been the absence…
With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p-n junctions,…
We present low-temperature Raman measurements on gate tunable graphene encapsulated in hexagonal boron nitride, which allows to study in detail the Raman G and 2D mode frequencies and line widths as function of the charge carrier density.…
All local electronic properties of graphene on a hexagonal boron nitride (hBN) substrate exhibit spatial moir\'e patterns related to lattice constant and orientation differences between shared triangular Bravais lattices. We apply a…